公开(公告)号：CA2039875A1

公开(公告)日：1991-10-07

申请号：CA2039875

申请日：1991-04-05

Applicant: IBM

Inventor： WEBB DAVID J ,  HEUBERGER WILHELM ,  HARDER CHRISTOPH S ,  HOH PETER D

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01S3/025

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.

公开(公告)号：CA2006266C

公开(公告)日：1993-01-12

申请号：CA2006266

申请日：1989-12-20

Applicant: IBM

Inventor： GALEUCHET YVAN ,  GRAF VOLKER ,  HEUBERGER WILHELM ,  ROENTGEN PETER

IPC: H01L29/201 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L29/775 ,  H01L29/812 ,  H01S5/12 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/40 ,  H01L21/36

Abstract: A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber inbetween layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth- and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.

公开(公告)号：CA2039875C

公开(公告)日：1994-05-03

申请号：CA2039875

申请日：1991-04-05

Applicant: IBM

Inventor： WEBB DAVID J ,  HEUBERGER WILHELM ,  HARDER CHRISTOPH S ,  HOH PETER D

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01S3/025

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process stepthat is used to expose the contact layer to ohmic contact metallization deposition.

公开(公告)号：CA2006266A1

公开(公告)日：1990-09-10

申请号：CA2006266

申请日：1989-12-20

Applicant: IBM

Inventor： GALEUCHET YVAN ,  GRAF VOLKER ,  HEUBERGER WILHELM ,  ROENTGEN PETER

IPC: H01L29/201 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L29/775 ,  H01L29/812 ,  H01S5/12 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/40

Abstract: A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber inbetween layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth- and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.

公开(公告)号：DE69010485T2

公开(公告)日：1995-01-26

申请号：DE69010485

申请日：1990-04-06

Applicant: IBM

Inventor： HARDER CHRISTOPH DR ,  HEUBERGER WILHELM ,  HOH PETER ,  WEBB DAVID

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01L33/00 ,  H01S3/19 ,  H01L21/308

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.

公开(公告)号：DE69102263T2

公开(公告)日：1994-12-08

申请号：DE69102263

申请日：1991-03-11

Applicant: IBM

Inventor： ROENTGEN PETER DR ,  HEUBERGER WILHELM ,  UNGER PETER DR ,  BONA GIAN-LUCA

IPC: H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01S5/00 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19 ,  H01L29/73

Abstract: Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces : the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.

公开(公告)号：DE69010485D1

公开(公告)日：1994-08-11

申请号：DE69010485

申请日：1990-04-06

Applicant: IBM

Inventor： HARDER CHRISTOPH DR ,  HEUBERGER WILHELM ,  HOH PETER ,  WEBB DAVID

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01L33/00 ,  H01S3/19 ,  H01L21/308

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.

公开(公告)号：DE69102263D1

公开(公告)日：1994-07-07

申请号：DE69102263

申请日：1991-03-11

Applicant: IBM

Inventor： ROENTGEN PETER DR ,  HEUBERGER WILHELM ,  UNGER PETER DR ,  BONA GIAN-LUCA

IPC: H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01S5/00 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19 ,  H01L29/73

Abstract: Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces : the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.

公开(公告)号：CA2062153A1

公开(公告)日：1992-09-12

申请号：CA2062153

申请日：1992-03-02

Applicant: IBM

Inventor： BONA GIAN-LUCA ,  HEUBERGER WILHELM ,  ROENTGEN PETER ,  UNGER PETER

IPC: H01S5/00 ,  H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/025 ,  H01S3/08 ,  H01L21/203

Abstract: SZ 9-91-002 Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces: the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.