公开(公告)号：JP2000123363A

公开(公告)日：2000-04-28

申请号：JP28385399

申请日：1999-10-05

Applicant: IBM

Inventor： ROLF ALLENSPACH ,  ANDREAS BISKOV ,  DUERIG URS T

IPC: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/66 ,  G11B5/73 ,  G11B5/84 ,  G11B5/855 ,  H01F41/34

Abstract: PROBLEM TO BE SOLVED: To extend the possibility of local formation or modification of a pattern of specific magnetization direction in a planar magnetic surface or in a magnetic film and to obtain an improved magnetic storage and recording device having one or more surfaces in which such patterns are formed. SOLUTION: A method for locally forming or modifying a pattern of specific magnetization modification in an at least potentially ferromagnetic surface includes a step for forming a prescribed pattern of discrete magnetization regions on the magnetic surface preferably by exposing the magnetic surface to the bombardment of activated subatom corpuscles directed toward the magnetic surface in the form of electron beams. The method increases the density of information magnetically encoded on a magnetic medium such as a hard disk.

公开(公告)号：GB2569761B

公开(公告)日：2020-06-03

申请号：GB201906071

申请日：2017-08-16

Applicant: IBM

Inventor： ROLF ALLENSPACH ,  DANIEL WORLEDGE ,  ANTHONY ANNUNZIATA ,  SEE-HUN YANG

IPC: H01L43/08 ,  G11C11/16

Abstract: A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer and a free magnetic layer, and an insulating barrier layer there-between. Each of the magnetic layers has an out-of-plane magnetization orientation. The junction is configured so as to allow a spin-polarized current flow generated from one of the two magnetic layers to the other to initiate an asymmetrical switching of the magnetization orientation of the free layer. The switching is off-centered toward an edge of the stack. The junction may allow a spin-polarized current flow that is off-centered toward an edge of the stack, from one of the two magnetic layers to the other, to initiate the asymmetrical switching. Related devices and methods of operation are also provided.

公开(公告)号：BR112013001584B1

公开(公告)日：2020-04-22

申请号：BR112013001584

申请日：2011-06-08

Applicant: IBM

Inventor： CARL ZINONI ,  ROLF ALLENSPACH

IPC: G11C11/16 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

Abstract: dispositivo de memória de acesso aleatório magnético e método para produzir um dispositivo de memória de acesso aleatório magnético o dispositivo de memória de acesso aleatório magnético (mram) têm linhas de palavras de leitura, linhas de palavras de escrita, linhas de bit, e uma pluralidade de células de bits de memória sendo interligadas através de linhas de texto de leitura, as linhas da palavra escrita e as linhas de bits, cada uma das células de bit da memória que têm um elemento de camada ferromagnética fixo e um elemento de camada ferromagnética livre separados por um elemento dielétrico de barreira de túnel, em que cada uma das linhas de palavras de escrita e um respectivo número de elementos livres de camada ferromagnética são formadas como uma única linha ferromagnética, contínua.

公开(公告)号：GB2569761A8

公开(公告)日：2019-08-14

申请号：GB201906071

申请日：2017-08-16

Applicant: IBM

Inventor： ROLF ALLENSPACH ,  DANIEL WORLEDGE ,  ANTHONY ANNUNZIATA ,  SEE-HUN YANG

IPC: H01L43/08 ,  G11C11/16

Abstract: A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer(11) and a free magnetic layer(13), and an insulating barrier layer(12) there-between. Each of the magnetic layers has an out-of-plane magnetization orientation. The junction is configured so as to allow a spin-polarized current flow generated from one of the two magnetic layers to the other to initiate an asymmetrical switching of the magnetization orientation of the free layer. The switching is off-centered toward an edge of the stack. The junction may allow a spin-polarized current flow that is off-centered toward an edge of the stack, from one of the two magnetic layers to the other, to initiate the asymmetrical switching. Related devices and methods of operation are also provided.

公开(公告)号：GB2569761A

公开(公告)日：2019-06-26

申请号：GB201906071

申请日：2017-08-16

Applicant: IBM

Inventor： ROLF ALLENSPACH ,  DANEIL WORLEDGE ,  ANTHONY ANNUNZIATA ,  SEE-HUN YANG

IPC: H01L43/08 ,  G11C11/16

Abstract: A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer(11) and a free magnetic layer(13), and an insulating barrier layer(12) there-between. Each of the magnetic layers has an out-of-plane magnetization orientation. The junction is configured so as to allow a spin-polarized current flow generated from one of the two magnetic layers to the other to initiate an asymmetrical switching of the magnetization orientation of the free layer. The switching is off-centered toward an edge of the stack. The junction may allow a spin-polarized current flow that is off-centered toward an edge of the stack, from one of the two magnetic layers to the other, to initiate the asymmetrical switching. Related devices and methods of operation are also provided.

公开(公告)号：SG97144A1

公开(公告)日：2003-07-18

申请号：SG200001279

申请日：2000-03-09

Applicant: IBM

Inventor： ROLF ALLENSPACH ,  JEAN FOMPEYRINE ,  ERIC FULLERTON ,  JEAN PIERRE LOCQUET ,  TIMOTHY MORAN ,  MARIA SEO

IPC: G01R33/09 ,  G11B5/39 ,  G11B5/66 ,  G11B5/74 ,  H01F10/22 ,  H01F10/32 ,  H01F41/18 ,  H01F41/22 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01F10/08 ,  H01L43/10

Abstract: A magnetic device comprises an antiferromagnetic layer which is in direct contact with a ferromagnetic layer for inducing an exchange bias in the ferromagnetic layer. Thus, the ferromagnetic layer is pinned by the antiferromagnetic layer. The antiferromagnetic layer comprises a compound which is usable at high operating temperatures.