公开(公告)号：JPH11289016A

公开(公告)日：1999-10-19

申请号：JP2366499

申请日：1999-02-01

Applicant: IBM

Inventor： EDWARD J NOWACK ,  RONALD D ROSSI ,  MIN H TONG

IPC: H01L29/78 ,  G11C19/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/115 ,  H01L29/772

Abstract: PROBLEM TO BE SOLVED: To provide a DTFET(dynamic threshold field effect transistor) which can improve a switching speed in a transistor circuit and can use a power voltage higher than 0.5 volts. SOLUTION: A DTFET 12 includes a resistance 18 connected between an input node 14 and a body 15. Inclusion of such a resistance can realization of the DTFET by a bulk technique and can utilize a power voltage higher than 0.5 volts. The resistance 18 can be provided in the form of a resistance integrated within a transistor or in the form of an independent element separated from the transistor.