公开(公告)号：JP2000101093A

公开(公告)日：2000-04-07

申请号：JP24211799

申请日：1999-08-27

Applicant: IBM

Inventor： BRYANT ANDRES ,  CLARK WILLIAM F ,  ELLIS-MONAGHAN JOHN J ,  MACIEJEWSKI EDWARD P ,  EDWARD J NOWACK ,  WILBUR D PRISER ,  MIN H TONG

IPC: H01L27/06 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a device structure of SOI(silicon on isulator) CMOS (complementary metal oxide semiconductor) in which avalanche multiplication of current flowing through a device is increased when an FET(field effect transistor) is turned on and body charges are removed when the FET is turned off. SOLUTION: An FET having an electric floating body is substantially isolated electrically from a substrate. A high resistance path 16 for coupling the floating body is provided at the source. The resistor is operated as a floating body for active switching and a body grounded in waiting mode in order to reduce leakage current. The high resistance path has a resistance of at least 1 MΩ and made of polysilicon. The resistor is formed using a split polysilicon process for opening a hole in a first polysilicon layer in order that an embedded contact mask 19 brings a second polysilicon layer into contact with the substrate.

公开(公告)号：JPH11289016A

公开(公告)日：1999-10-19

申请号：JP2366499

申请日：1999-02-01

Applicant: IBM

Inventor： EDWARD J NOWACK ,  RONALD D ROSSI ,  MIN H TONG

IPC: H01L29/78 ,  G11C19/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/115 ,  H01L29/772

Abstract: PROBLEM TO BE SOLVED: To provide a DTFET(dynamic threshold field effect transistor) which can improve a switching speed in a transistor circuit and can use a power voltage higher than 0.5 volts. SOLUTION: A DTFET 12 includes a resistance 18 connected between an input node 14 and a body 15. Inclusion of such a resistance can realization of the DTFET by a bulk technique and can utilize a power voltage higher than 0.5 volts. The resistance 18 can be provided in the form of a resistance integrated within a transistor or in the form of an independent element separated from the transistor.