公开(公告)号：JP2001274112A

公开(公告)日：2001-10-05

申请号：JP2001055239

申请日：2001-02-28

Applicant: IBM

Inventor： CYRILLE CABRAL JR ,  ROY ARTHUR KARAZAASU ,  HARPER JAMES MCKELL EDWIN ,  PAUL MICHAEL KOZLOSKY ,  CHRISTIAN LEIBOW ,  JOSEPH SCOTT NEWBERG ,  RONEN ANDREW ROVU

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/8238 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a metal silicide contact holding a resistance value within the present operating standard, while the high temperature stability is increased. SOLUTION: Prior to activating a source-drain region in the structure, at least an alloying element is added to a metal capable of forming a metal silicide, by annealing and alloyed to obtain a metal alloy silicide contact without agglomeration. A complementary metal oxide semiconductor(CMOS) device, having a metal silicide contact which is durable against high-temperature annealing used for activating the source-drain region of the device is provided by adding at least an alloy element to an initial metal layer used for forming the silicide.