公开(公告)号：EP1695381A4

公开(公告)日：2008-09-17

申请号：EP03796637

申请日：2003-12-04

Applicant: IBM

Inventor： DOKUMACI OMER H ,  RONSHEIM PAUL

IPC: H01L21/8242 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L29/10 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/6659 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/26513 ,  H01L21/28114 ,  H01L29/1083 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for forming a semiconductor device includes defining a sacrificial layer (108) over a single crystalline substrate (106). The sacrificial layer (108) is implanted with a dopant species in a manner that prevents the single crystalline substrate (106) from becoming substantially amorphized. The sacrificial layer (108) is annealed so as to drive said dopant species from said sacrificial layer (108) into said single crystalline substrate (106).

公开(公告)号：AU2003298876A1

公开(公告)日：2005-08-12

申请号：AU2003298876

申请日：2003-12-04

Applicant: IBM

Inventor： DOKUMACI OMER H ,  RONSHEIM PAUL

IPC: H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L29/423 ,  H01L29/786

Abstract: A method for forming a semiconductor device includes defining a sacrificial layer (108) over a single crystalline substrate (106). The sacrificial layer (108) is implanted with a dopant species in a manner that prevents the single crystalline substrate (106) from becoming substantially amorphized. The sacrificial layer (108) is annealed so as to drive said dopant species from said sacrificial layer (108) into said single crystalline substrate (106).