公开(公告)号：EP0205874A2

公开(公告)日：1986-12-30

申请号：EP86106446

申请日：1986-05-13

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: C23F4/00 ,  C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3405

Abstract: A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc- source 20 combined with a conventional plasma sputter etching/deposition system such as a magnetron 13, 17. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic filed 15 and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure - (not shown) is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.

公开(公告)号：DE3689428D1

公开(公告)日：1994-02-03

申请号：DE3689428

申请日：1986-04-08

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: H01J37/077 ,  H01J1/02 ,  H01J3/02 ,  H01J37/073

Abstract: A high current density hollow cathode electron beam source for use in various E-beam apparatus is described. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages. … The drawing shows the hollow cathode into which plasma gas is introduced via port 40 and the electron beam exits via aperture 36 to grid 58. Ionization of the gas is initiated by voltage source 54 and the electron beam is sustained by voltage 57.

公开(公告)号：DE3689428T2

公开(公告)日：1994-06-23

申请号：DE3689428

申请日：1986-04-08

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: H01J37/077 ,  H01J1/02 ,  H01J3/02 ,  H01J37/073

Abstract: A high current density hollow cathode electron beam source for use in various E-beam apparatus is described. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages. … The drawing shows the hollow cathode into which plasma gas is introduced via port 40 and the electron beam exits via aperture 36 to grid 58. Ionization of the gas is initiated by voltage source 54 and the electron beam is sustained by voltage 57.

公开(公告)号：DE3682954D1

公开(公告)日：1992-01-30

申请号：DE3682954

申请日：1986-05-13

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: C23F4/00 ,  C23C14/35 ,  H01J37/34

Abstract: A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc- source 20 combined with a conventional plasma sputter etching/deposition system such as a magnetron 13, 17. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic filed 15 and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure - (not shown) is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.