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    3.
    发明专利
    未知

    公开(公告)号：DE3584247D1

    公开(公告)日：1991-10-31

    申请号：DE3584247

    申请日：1985-07-12

    Applicant: IBM DEUTSCHLAND

    Inventor： RUH WOLF-DIETER ,  SCHAEFER ROLF DR

    IPC: B08B3/10 ,  H05K3/00 ,  H05K3/26 ,  H05K3/42 ,  H01L21/31

    Abstract: Drilled holes in circuit boards with high ratio of hole dia. to circuit board thickness are cleaned by plasma etching with a CF4/O2 mixt., using the following steps: (a) charging a plasma reactor with the circuit boards and evacuating to a first predetermined pressure; (b) introducing gas mixt. of ca. 50-80 (vol.)% CF4 and 50-20 (vol.)% O2 to a second predetermined pressure; (c) switching on a H.F. generator connected to the plasma (d) maintaining the plasma over a period long enough to clean the drilled holes; and (e) switching off the H.F. generator, introducing air and discharging the plasma reactor. The circuit boards pref. have dimensions of 600 x 700 mm and holes with a ratio of hole dia. to board thickness of ca. 1:11-13. The first pressure is pref. 0.066 mbar. Gas mixt. pref. consists of 55-70, esp. 60% CF4 and 45-30, esp. 40% O2 and is introduced at a rate of 1.2 l/min. to a pressure of 0.1-1, esp. 0.333 mbar. H.F. generator pref. has an output of ca. 3-6, pref. 3.5 kW. Plasma treatment is carried out for 60 min., pref. for 2 periods of 25 min., with an intervening 10 min. break, at a temp. of 80-150, pref. 74-121 deg.C. Desired etching front is obtd. by regulating the CF4 concn. in O2.

    METHOD OF DIRECTLY DETERMINING THE MAGNETOSTRICTION CONSTANT AND DEVICE FOR CARRYING OUT SAID METHOD
    4.
    发明专利
    METHOD OF DIRECTLY DETERMINING THE MAGNETOSTRICTION CONSTANT AND DEVICE FOR CARRYING OUT SAID METHOD 未知

    公开(公告)号：CA1160293A

    公开(公告)日：1984-01-10

    申请号：CA339630

    申请日：1979-11-13

    Applicant: IBM

    Inventor： BRUNSCH ARWED ,  RUH WOLF-DIETER ,  SCHNEIDER JOCHEN ,  TRIPPEL GERHARD

    IPC: G01R33/18

    Abstract: METHOD OF DIRECTLY DETERMINING THE MAGNETOSTRICTION CONSTANT AND DEVICE FOR CARRYING OUT SAID METHOD The invention provides method and apparatus for determining and measuring the magnetostriction constant of magnetic thin film materials in which said material is applied on a substrate and the thus formed sample clamped at one end being deflected under the influence of a magnetic field through utilizing the respective magnetostriction effect, and the magnetostriction constant being measured via the deflection representing a measure for the magnetostriction constant characterized in that the sample is subjected to a magnetic AC field, wherein the magnetic AC field is frequency adjustable, and the magnetic AC field is adjusted with respect to frequency in such a manner that the sample can be set to vibrate in resonance, and whereupon the vibration amplitude (a, ares) of the sample which is a measure for the magnetostriction constant is determined opto-electrically. .

    METHOD FOR PRODUCING MAGNETIC RECORDING LAYERS OF THIN-FILM DISKS
    7.
    发明专利
    METHOD FOR PRODUCING MAGNETIC RECORDING LAYERS OF THIN-FILM DISKS 未知

    公开(公告)号：CA1189822A

    公开(公告)日：1985-07-02

    申请号：CA398574

    申请日：1982-03-17

    Applicant: IBM

    Inventor： BRUNSCH ARWED ,  RUH WOLF-DIETER ,  TRIPPEL GERHARD

    IPC: G11B5/82 ,  G11B5/64 ,  G11B5/738 ,  G11B5/84 ,  G11B5/851 ,  H01F10/16 ,  H01F41/18 ,  H01F41/20 ,  C23C14/34

    Abstract: Method Of Producing A Metallic Thin-Film Magnetic Disk And Arrangement For Implementing This Method Method of and arrangement for producing a metallic thin-film magnetic disk, whereby a chromium undercoat and a magnetic layer, in particular of an FeCoCr alloy, are obliquely sputtered by means of a sputtering system onto a substrate at an angle of incidence of about 60.degree.. The operating pressure of the argon gas atmosphere is between 5 and 15 .mu.bar and the thickness (tCr) of the undercoat, which also influences the coercive field strength, is between about 50 and 180 nm. By means of a sector shutter of suitable shape, the thickness distribution between the inner diameter ID and the outer diameter OD of the storage area of the magnetic disk can be influenced in the desired manner. GE9-80-050

    8.
    发明专利
    未知

    公开(公告)号：DE2851771B1

    公开(公告)日：1980-04-17

    申请号：DE2851771

    申请日：1978-11-30

    Applicant: IBM DEUTSCHLAND

    Inventor： TRIPPEL GERHARD DIPL-PHYS DR ,  BRUNSCH ARWED DIPL-PHYS DR ,  RUH WOLF-DIETER ,  SCHNEIDER JOCHEN

    IPC: G01R33/18

    Abstract: Direct method for measuring the magnetostriction constant lambda s of soft magnetic and isotropic magnetic materials. A thin film sample is cantilevered and clamped at one edge. Under the influence of a magnetic AC field and the magnetostriction effect of the sample material, the free end of the cantilevered sample is deflected and oscillates with twice the frequency of the AC field. The resonance amplitude ares is measured by using a laser beam impinging upon the oscillating sample and measuring the reflected beam amplitude by means of a position-sensitive photodiode. The AC output signal of the photodiode is proportional to the sample amplitude. The magnetostriction constant lambda s is directly proportional to the resonance amplitude ares multiplied by a constant factor which depends on known geometry and properties of the sample material.

    METHOD OF FORMING VIADUCTS IN SEMICONDUCTOR MATERIAL
    9.
    发明专利
    METHOD OF FORMING VIADUCTS IN SEMICONDUCTOR MATERIAL 未知

    公开(公告)号：CA1072219A

    公开(公告)日：1980-02-19

    申请号：CA271450

    申请日：1977-02-09

    Applicant: IBM

    Inventor： RUH WOLF-DIETER ,  TRIPPEL GERHARD

    IPC: B41J2/135 ,  B26F1/26 ,  B41J2/16 ,  C23F1/00 ,  C23F1/02 ,  D01D4/00 ,  G03F1/20 ,  G03F7/09 ,  H01L21/46

    Abstract: METHOD OF FORMING VIADUCTS IN SEMICONDUCTOR MATERIAL This method of forming viaducts or "through-holes" in semiconductor material for transistor and integrated circuit fabrication and especially for ink jet printing systems forms viaducts of uniform diameter without critical registration of masks. A seed layer of Cr-Au is sputtered onto a silicondioxide substrate. The viaducts or holes to be made are imaged by a photoresist process with a 5 .mu., thick photoresist on this seed layer. A 4 .mu. thick gold layer is now applied on the seed layer by a plating process. After the dissolution of the photoresist this layer contains the hole pattern with the holes having the required diameter. In order to make a through-hole, the substrate has to be etched. For that purpose, the bare substrate surface is covered with photoresist and exposed from the back through gold holes; and subsequently developed. Problems owing to light diffraction at the edges of the gold with respect to the great distance of the gold mask photoresist layer are not anticipated here because of the large holes and the high tolerances in this process step. Prior to etching the substrate, the gold layer with the hole pattern is covered by photoresist so that the substrate etching can take place from one side only. Now the substrate is etched until all of the gold holes are free. In that process, the extent of the substrate sub-etching is of small importance as the viaduct or hole diameter is defined by the gold mask. The photoresist is removed and the exposed substrate surfaces are protected against chemical reactions with the ink by a vapor-deposition of a protective layer.

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