公开(公告)号：JPH0846158A

公开(公告)日：1996-02-16

申请号：JP16361395

申请日：1995-06-29

Applicant: IBM

Inventor： RUI RUU CHIEN SHIYUU ,  OGURA SEIKI ,  JIYOOZEFU FURANSHISU SHIEPAADO

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/8242 ,  H01L27/108

Abstract: PURPOSE: To provide a method for forming a trench capacitor type DRAM cell. CONSTITUTION: The DRAM is fabricated by making a trench collar through a single step for extending a shallow trench in the horizontal direction and coating a collar conformally, etching the trench to the final depth and filling the bottom part deeply, doping the side wall lightly and forming a conductive path through a strap 255 formed between the upper surface of a polysilicon inner electrode 240 and an adjacent transistor electrode 124. According to the method, the DRAM can be fabricated by a simplified process where the degree of freedom of processing is enhanced while reducing the cost.