公开(公告)号：JP2002009145A

公开(公告)日：2002-01-11

申请号：JP2001136570

申请日：2001-05-07

Applicant: IBM

Inventor： COHEN GUY MOSHE ,  SADANA DEVENDRA KUMAR

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a pattern formation buried oxide film. SOLUTION: The method for forming the pattern formation buried oxide film comprises a step of carrying out implantation into a substrate, a step of forming a mask at least on part of the substrate in order to control implantation diffusion, and a step of annealing the substrate and forming a buried oxide. The mask can be selectively pattern-formed. A thinner buried oxide can be formed in a region coated by the mask than in a region exposed to an annealing atmosphere directly.