公开(公告)号：DE2314124A1

公开(公告)日：1973-10-04

申请号：DE2314124

申请日：1973-03-21

Applicant: IBM

Inventor： HEWETT WILLIAM AINSLIE ,  SARATOGA CALIF ,  LEVINE HAROLD A ,  GIPSTEIN EDWARD

IPC: C08F2/00 ,  C08F2/48 ,  C23F1/00 ,  G03F7/039 ,  H01L21/00 ,  H01L21/027 ,  H01L23/29 ,  H05K3/00 ,  B44C1/00

Abstract: Patterns, such as etch resistant resists, masks, are formed by degradation of a t-butyl methacrylate polymer coating, or film, under an electron beam in a predetermined pattern, followed by removal with a solvent, of the electron degraded product in the exposed areas.