公开(公告)号：DE3584247D1

公开(公告)日：1991-10-31

申请号：DE3584247

申请日：1985-07-12

Applicant: IBM DEUTSCHLAND

Inventor： RUH WOLF-DIETER ,  SCHAEFER ROLF DR

IPC: B08B3/10 ,  H05K3/00 ,  H05K3/26 ,  H05K3/42 ,  H01L21/31

Abstract: Drilled holes in circuit boards with high ratio of hole dia. to circuit board thickness are cleaned by plasma etching with a CF4/O2 mixt., using the following steps: (a) charging a plasma reactor with the circuit boards and evacuating to a first predetermined pressure; (b) introducing gas mixt. of ca. 50-80 (vol.)% CF4 and 50-20 (vol.)% O2 to a second predetermined pressure; (c) switching on a H.F. generator connected to the plasma (d) maintaining the plasma over a period long enough to clean the drilled holes; and (e) switching off the H.F. generator, introducing air and discharging the plasma reactor. The circuit boards pref. have dimensions of 600 x 700 mm and holes with a ratio of hole dia. to board thickness of ca. 1:11-13. The first pressure is pref. 0.066 mbar. Gas mixt. pref. consists of 55-70, esp. 60% CF4 and 45-30, esp. 40% O2 and is introduced at a rate of 1.2 l/min. to a pressure of 0.1-1, esp. 0.333 mbar. H.F. generator pref. has an output of ca. 3-6, pref. 3.5 kW. Plasma treatment is carried out for 60 min., pref. for 2 periods of 25 min., with an intervening 10 min. break, at a temp. of 80-150, pref. 74-121 deg.C. Desired etching front is obtd. by regulating the CF4 concn. in O2.

公开(公告)号：DE69323196D1

公开(公告)日：1999-03-04

申请号：DE69323196

申请日：1993-09-14

Applicant: IBM

Inventor： ECHENSPERGER HEIMO ,  EIBACH WOLFGANG ,  FOX MICHAEL ,  HARZ HANS-H ,  SCHAEFER ROLF DR ,  STREIT RALF

IPC: G06F13/00 ,  G06F3/023 ,  G06F3/048 ,  G06F9/48 ,  G06F9/54 ,  G06F9/46