公开(公告)号：US3881971A

公开(公告)日：1975-05-06

申请号：US31031872

申请日：1972-11-29

Applicant: IBM

Inventor： GREER STUART E ,  SCHNITZEL RANDOLPH H ,  WALDMAN DAVID P

IPC: H01L21/768 ,  H01L21/00 ,  H01L21/28 ,  H01L21/285 ,  H01L23/485 ,  H01L23/522 ,  C23B3/04 ,  C23F1/02

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L21/2855 ,  H01L23/522 ,  H01L2224/13

Abstract: A method of fabricating an improved aluminum metallurgy system of conductive stripes on a monocrystalline silicon semiconductor device that makes electrical contact with the body of the device through at least one opening in an insulating layer, wherein there is formed a blanket layer of aluminum over the insulating layer which makes contact through the monocrystalline body of silicon through at least one opening, a thin blanket layer of silicon is deposited over the layer of aluminum, selected portions of the aluminum and silicon layers are removed to define an interconnection metallurgy system, and a passivating layer of insulating material is formed over the metallurgy system. The resultant semiconductor device is capable of withstanding heat for prolonged periods of time at temperatures of up to 577* C without undergoing significant aluminum penetration into the silicon body since the silicon on the overlying layer satisfies the silicon solubility requirements of the aluminum.

Abstract translation: 一种在单晶硅半导体器件上制造导电条的改进的铝冶金系统的方法，其通过绝缘层中的至少一个开口与器件的主体电接触，其中在绝缘层上形成覆盖层的铝 层，其通过至少一个开口与硅的单晶体接触，在铝层上沉积薄的覆盖层硅，去除铝和硅层的选定部分以限定互连冶金系统和钝化 在冶金系统上形成绝缘材料层。 所得到的半导体器件能够在高达577℃的温度下耐受长时间的热量，而不会经历显着的铝渗入硅体，因为上覆层上的硅满足铝的硅溶解度要求。

公开(公告)号：FR2337425A1

公开(公告)日：1977-07-29

申请号：FR7635305

申请日：1976-11-19

Applicant: IBM

Inventor： BHATIA HARSARAN S ,  CALHOUN HARRY C ,  MELHADO ROBERT L ,  SCHNITZEL RANDOLPH H

IPC: H01L29/872 ,  H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  H01L21/324 ,  H01L29/48

公开(公告)号：CA996281A

公开(公告)日：1976-08-31

申请号：CA184342

申请日：1973-10-26

Applicant: IBM

Inventor： GREER STUART E ,  SCHNITZEL RANDOLPH H ,  WALDMAN DAVID P

IPC: H01L21/768 ,  H01L21/00 ,  H01L21/28 ,  H01L21/285 ,  H01L23/485 ,  H01L23/522

Abstract: A method of fabricating an improved aluminum metallurgy system of conductive stripes on a monocrystalline silicon semiconductor device that makes electrical contact with the body of the device through at least one opening in an insulating layer, wherein there is formed a blanket layer of aluminum over the insulating layer which makes contact through the monocrystalline body of silicon through at least one opening, a thin blanket layer of silicon is deposited over the layer of aluminum, selected portions of the aluminum and silicon layers are removed to define an interconnection metallurgy system, and a passivating layer of insulating material is formed over the metallurgy system. The resultant semiconductor device is capable of withstanding heat for prolonged periods of time at temperatures of up to 577 DEG C without undergoing significant aluminum penetration into the silicon body since the silicon on the overlying layer satisfies the silicon solubility requirements of the aluminum.