公开(公告)号：US3911303A

公开(公告)日：1975-10-07

申请号：US17317171

申请日：1971-08-19

Applicant: IBM

Inventor： HU PAUL Y ,  KAROL KENNETH N ,  PUZO GARY A ,  SCHWARTZ BRADFORD C

IPC: H01R39/32 ,  H02K3/26 ,  H02K13/08 ,  H02K13/04

CPC classification number: H01R39/32 ,  H02K3/26 ,  H02K13/08

Abstract: A high-torque low-inertia armature for use with an electric motor wherein the armature winding is formed of aluminum conductors, and wherein a copper commutation band is formed on selected aluminum conductors in a manner to mechanically lock each commutator segment to its aluminum conductor, the locking structure being constructed and arranged to continue to function as the motor brush wears away to the top surface of the aluminum conductor.

Abstract translation: 一种用于电动机的高扭矩低惯性电枢，其中电枢绕组由铝导体形成，并且其中以选择的铝导体形式将铜换向带以机械方式将每个换向片段锁定在其铝导体上的方式， 锁定结构被构造和布置成继续起到电动机刷磨损到铝导体的顶表面的作用。

公开(公告)号：CA1078331A

公开(公告)日：1980-05-27

申请号：CA258911

申请日：1976-08-11

Applicant: IBM

Inventor： SCHWARTZ BRADFORD C ,  SILKENSEN RALPH D ,  STEVING GERALD

IPC: C23C15/00

Abstract: RF BIAS SPUTTERING METHOD FOR PRODUCING INSULATING FILMS FREE OF SURFACE IRREGULARITIES Using this method an insulating film substantially free from surface irregularities is RF bias sputtered onto a smooth polycrystalline or micro-roughened surface. This is accomplished by controlled resputtering at a first low ratio and then, after a substantially continuous layer of insulative amorphous film is deposited over the substrate, increasing the resputtering to a second higher ratio.

公开(公告)号：FR2408858A1

公开(公告)日：1979-06-08

申请号：FR7829354

申请日：1978-10-09

Applicant: IBM

Inventor： ELLIS RICHARD E ,  SCHWARTZ BRADFORD C ,  THOMPSON JOHN A

IPC: G03G15/08 ,  G03G15/09

公开(公告)号：FR2353650A1

公开(公告)日：1977-12-30

申请号：FR7703518

申请日：1977-02-01

Applicant: IBM

Inventor： SCHWARTZ BRADFORD C ,  SILKENSEN RALPH D ,  STEVING GERALD

IPC: H01F41/02 ,  C23C15/00

Abstract: During formation of a smooth (roughness 250 A) electroinsulating layer on a polycrystalline, monocrystalline or amorphous substrate (roughness is not >500 angstroms) by high-frequency cathodic sputtering, a part of the deposited material (re-emission coefft.) is removed by the ion bombardment with the loss of a part of the electric energy. The process is improved by forming a first layer of the insulating material at an energy loss coefft. of =1:12 or less (pref, between 1:12-35) and a re-emission coefft. of =0.35 (pref. 0.35-0.15); and then a second layer of the insulating material at an energy loss coefft. of >=1:5 (pref. 1:5-1.5), and a re-emission coefft. of >=0.6 (pref. 0.6-0.8). Different surfaces can be smoothly coated. This is of special importance whom a very thin magnetic layer is to be applied onto the insulating layer, as the properties of such magnetic layers greatly depend on the smoothness of the substrate (e.g. in magnetic heads).

公开(公告)号：CA1078532A

公开(公告)日：1980-05-27

申请号：CA287334

申请日：1977-09-23

Applicant: IBM

Inventor： CARLSON JEFFREY A ,  SCHWARTZ BRADFORD C ,  STEVING GERALD

IPC: C09J7/02 ,  B23K1/19 ,  B23K1/20 ,  B23K20/22 ,  B23K35/00 ,  B29C63/00 ,  B32B37/00 ,  C04B37/00 ,  C09J5/00 ,  G02F1/11 ,  H01L41/00 ,  H01L41/047 ,  H01L41/22 ,  H01L21/18 ,  B23K31/02

Abstract: DIFFUSION BONDING OF CRYSTALS A method of bonding two crystals together is disclosed. A bond enhancing material such as chromium (Cr) is vapor deposited on one crystal, and on this is vapor deposited a noble metal such as gold (Au). On the other crystal a low melting point metal such as tin (Sn) or indium (In) is vapor deposited. In the case of In this can either be directly on the crystal or on a layer of bond enhancing material; in the case of Sn this must be on a bond enhancing material. On top of the low melting point metal a layer of the same noble metal is deposited to prevent oxidation thereof. The noble metal layers are brought into contact with each other in vacuum or inert atmosphere and pressure applied thereto at a temperature of 100.degree.C to 150.degree.C in the case of In and 100.degree.C to 200.degree.C in the case of Sn. The low melting point metal will diffuse into the noble metals and across the interface causing a bond to form by elimination of the boundary between the crystals.

公开(公告)号：FR2373168A1

公开(公告)日：1978-06-30

申请号：FR7731853

申请日：1977-10-14

Applicant: IBM

Inventor： CARLSON JEFFREY A ,  SCHWARTZ BRADFORD C ,  STEVING GERALD

IPC: C09J7/02 ,  B23K1/19 ,  B23K1/20 ,  B23K20/22 ,  B23K35/00 ,  B29C63/00 ,  B32B37/00 ,  C04B37/00 ,  C09J5/00 ,  G02F1/11 ,  H01L41/00 ,  H01L41/047 ,  H01L41/22 ,  G02F1/33

Abstract: A method of bonding two crystals together is disclosed. A bond enhancing material such as chromium (Cr) is vapor deposited on one crystal, and on this is vapor deposited a noble metal such as gold (Au). On the other crystal a low melting point metal such as tin (Sn) or indium (In) is vapor deposited. In the case of In this can either be directly on the crystal or on a layer of bond enhancing material; in the case of Sn this must be on a bond enhancing material. On top of the low melting point metal a layer of the same noble metal is deposited to prevent oxidation thereof. The noble metal layers are brought into contact with each other in vacuum or inert atmosphere and pressure applied thereto at a temperature of 100 DEG C to 150 DEG C in the case of In and 100 DEG C to 200 DEG C in the case of Sn. The low melting point metal will diffuse into the noble metals and across the interface causing a bond to form by elimination of the boundary between the crystals.