公开(公告)号：CA1078331A

公开(公告)日：1980-05-27

申请号：CA258911

申请日：1976-08-11

Applicant: IBM

Inventor： SCHWARTZ BRADFORD C ,  SILKENSEN RALPH D ,  STEVING GERALD

IPC: C23C15/00

Abstract: RF BIAS SPUTTERING METHOD FOR PRODUCING INSULATING FILMS FREE OF SURFACE IRREGULARITIES Using this method an insulating film substantially free from surface irregularities is RF bias sputtered onto a smooth polycrystalline or micro-roughened surface. This is accomplished by controlled resputtering at a first low ratio and then, after a substantially continuous layer of insulative amorphous film is deposited over the substrate, increasing the resputtering to a second higher ratio.

公开(公告)号：CA1127300A

公开(公告)日：1982-07-06

申请号：CA341315

申请日：1979-12-06

Applicant: IBM

Inventor： BASSETT ROGER D ,  MCCORMICK WAYNE ,  DAUGHENBAUGH GERALD A ,  FIELDS DAVIS S JR ,  POLLEYS RHODES W ,  SILKENSEN RALPH D ,  STEVING GERALD

IPC: G11B5/30

Abstract: WEAR RESISTANT MAGNETORESTRICTIVE HEAD An MR head is disclosed in which the MR element is deposited onto a sapphire substrate with a particular crystallographic orientation and a sapphire closure piece also having a particular crystallographic orientation is used. The substrate has the MR element deposited onto either the {0001} or the {1120} plane with -the {1100} plane being oriented as the wear surface. The closure piece has either the {1120} or the {0001} plane facing the MR material and the {1100} plane oriented as the wear surface. BO978058

公开(公告)号：FR2353650A1

公开(公告)日：1977-12-30

申请号：FR7703518

申请日：1977-02-01

Applicant: IBM

Inventor： SCHWARTZ BRADFORD C ,  SILKENSEN RALPH D ,  STEVING GERALD

IPC: H01F41/02 ,  C23C15/00

Abstract: During formation of a smooth (roughness 250 A) electroinsulating layer on a polycrystalline, monocrystalline or amorphous substrate (roughness is not >500 angstroms) by high-frequency cathodic sputtering, a part of the deposited material (re-emission coefft.) is removed by the ion bombardment with the loss of a part of the electric energy. The process is improved by forming a first layer of the insulating material at an energy loss coefft. of =1:12 or less (pref, between 1:12-35) and a re-emission coefft. of =0.35 (pref. 0.35-0.15); and then a second layer of the insulating material at an energy loss coefft. of >=1:5 (pref. 1:5-1.5), and a re-emission coefft. of >=0.6 (pref. 0.6-0.8). Different surfaces can be smoothly coated. This is of special importance whom a very thin magnetic layer is to be applied onto the insulating layer, as the properties of such magnetic layers greatly depend on the smoothness of the substrate (e.g. in magnetic heads).