公开(公告)号：DE2846430A1

公开(公告)日：1979-05-17

申请号：DE2846430

申请日：1978-10-25

Applicant: IBM

Inventor： ELLIS RICHARD EARL ,  SCHWARTZ BRADFORD CLYDE ,  THOMPSON JOHN ADDISON

IPC: G03G15/08 ,  G03G15/09

公开(公告)号：DE2635667A1

公开(公告)日：1977-03-03

申请号：DE2635667

申请日：1976-08-07

Applicant: IBM

Inventor： SCHWARTZ BRADFORD CLYDE ,  SILKENSEN RALPH DONALD ,  STEVING GERALD

IPC: C04B41/87 ,  C23C14/02 ,  C23C14/06 ,  C23C14/08 ,  C23C14/34 ,  C23C14/40 ,  G11B5/31 ,  H01L21/31 ,  H01L43/02 ,  C23C15/00

公开(公告)号：DE2749696A1

公开(公告)日：1978-06-08

申请号：DE2749696

申请日：1977-11-07

Applicant: IBM

Inventor： CARLSON JEFFREY ALLEN ,  SCHWARTZ BRADFORD CLYDE ,  STEVING GERALD

IPC: C09J7/02 ,  B23K1/19 ,  B23K1/20 ,  B23K20/22 ,  B23K35/00 ,  B29C63/00 ,  B32B37/00 ,  C04B37/00 ,  C09J5/00 ,  G02F1/11 ,  H01L41/00 ,  H01L41/047 ,  H01L41/22 ,  B23K21/00

Abstract: A method of bonding two crystals together is disclosed. A bond enhancing material such as chromium (Cr) is vapor deposited on one crystal, and on this is vapor deposited a noble metal such as gold (Au). On the other crystal a low melting point metal such as tin (Sn) or indium (In) is vapor deposited. In the case of In this can either be directly on the crystal or on a layer of bond enhancing material; in the case of Sn this must be on a bond enhancing material. On top of the low melting point metal a layer of the same noble metal is deposited to prevent oxidation thereof. The noble metal layers are brought into contact with each other in vacuum or inert atmosphere and pressure applied thereto at a temperature of 100 DEG C to 150 DEG C in the case of In and 100 DEG C to 200 DEG C in the case of Sn. The low melting point metal will diffuse into the noble metals and across the interface causing a bond to form by elimination of the boundary between the crystals.

公开(公告)号：AU3829378A

公开(公告)日：1980-01-31

申请号：AU3829378

申请日：1978-07-24

Applicant: IBM

Inventor： ELLIS RICHARD EARL ,  SCHWARTZ BRADFORD CLYDE ,  THOMPSON JOHN ADDISON

IPC: G03G15/08 ,  G03G15/09