公开(公告)号：US3900337A

公开(公告)日：1975-08-19

申请号：US45825474

申请日：1974-04-05

Applicant: IBM

Inventor： BECK WOLFGANG ,  BRUNNER FRIEDRICH C ,  FRASCH PETER U ,  IVANCIC BLANKA ,  SCHWERDT FRIEDRICH W ,  VOGTMANN THEODOR

IPC: G03F7/42 ,  H01L21/311 ,  H01L21/312 ,  C09K13/04

CPC classification number: G03F7/423 ,  H01L21/31133

Abstract: Layers of organic material, especially of polymerized photoresist, are removed by means of a mixture of an at least 95% H2SO4, and an at least 30% H2O2, at a ratio of at least 15:1 (referring to the anhydrous chemical substances). The H2O2 content of the aqueous H2O2 is to be in a ratio of at least 11:1 to the H2O content of the H2SO4. The cleaning effect is based on the dehydrating effect of the H2SO4, and the oxidizing effect of the H2O2.

公开(公告)号：FR2356595A1

公开(公告)日：1978-01-27

申请号：FR7717616

申请日：1977-06-02

Applicant: IBM

Inventor： SCHWERDT FRIEDRICH W ,  STEINBECK HANS-HEINZ ,  BRUNNER FRIEDRICH C

IPC: C01B33/12 ,  C01B33/16 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306

Abstract: A method of making a metal-ion free silicon dioxide is provided which has a specifically uniform grain size and which is suitable for the mechanical polishing of semiconductor wafers. In the process according to the invention high grade silicon is dissolved in an aqueous solution of an organic amine. The base surplus is buffered by hydrogen ions from an added hydroxybenzene Subsequently, the solution is boiled under reflux for several hours with bubbling of purified air. The precipitated amorphous silicon dioxide is collected, rinsed, and suspended in water for the mechanical polishing of wafers.

公开(公告)号：CA1106143A

公开(公告)日：1981-08-04

申请号：CA281822

申请日：1977-06-30

Applicant: IBM

Inventor： SCHWERDT FRIEDRICH W ,  STEINBECK HANS-HEINZ ,  BRUNNER FRIEDRICH C

IPC: C01B33/12 ,  C01B33/16 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306

Abstract: A method of making a metal-ion free silicon dioxide is provided which has a specifically uniform grain size and which is suitable for the mechanical polishing of semiconductor wafers. In the process according to the invention high grade silicon is dissolved in an aqueous solution of an organic amine. The base surplus is buffered by hydrogen ions from an added hydroxybenzene Subsequently, the solution is boiled under reflux for several hours with bubbling of purified air. The precipitated amorphous silicon dioxide is collected, rinsed, and suspended in water for the mechanical polishing of wafers.

公开(公告)号：CA1026220A

公开(公告)日：1978-02-14

申请号：CA199318

申请日：1974-05-08

Applicant: IBM

Inventor： BECK WOLFGANG ,  BRUNNER FRIEDRICH C ,  FRASCH PETER U ,  IVANCIC BLANKA ,  SCHWERDT FRIEDRICH W ,  VOGTMANN THEODOR

IPC: H05K3/06 ,  C23F1/44 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H01L21/308 ,  H01L21/311 ,  B08B3/08