公开(公告)号：JP2001290264A

公开(公告)日：2001-10-19

申请号：JP2001039108

申请日：2001-02-15

Applicant: IBM

Inventor： DONALD C HOFER ,  SCOTT A MCDONALD ,  ARUPAN P MAHARUWARA ,  MILLER ROBERT D ,  JOSEPH MITCHELL ,  WALLRAFF GREGORY M

IPC: C08K5/55 ,  C08L25/04 ,  C08L33/12 ,  C08L101/02 ,  G03F7/004 ,  G03F7/039 ,  G03F7/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition which is transparent in the wavelength range of UV to a shorter wave and can utilize oxygen reactive ion etching using an additive in place of phenols. SOLUTION: The photoresist composition contains a polymer having an acid labile group, hydroxycarborane and a photo-acid generating agent. When the composition is used as an upper layered resist for two-layer thin film imaging lithography, the resist has superior transmittance to an illuminant of a wavelength in the extreme-ultraviolet region and has superior workability in the production of a semiconductor device.