公开(公告)号：GB2496985A

公开(公告)日：2013-05-29

申请号：GB201221074

申请日：2012-11-23

Applicant: IBM

Inventor： MCDEVITT THOMAS LEDDY ,  COONEY EDWARD CRANDAL ,  CHRISMAN GREGORY SCOTT ,  GAMBINO JEFFREY ,  SHAH EVA ,  HE ZHONG-XIANG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/64

Abstract: A method of fabricating a structure that provides an interconnect metal wire. A damascene metal wire 20 is surrounded by an insulator 12. To prevent cracking within the insulator material caused by thermal expansion of the metal wire an upper portion of the insulator is etched away to leave an exposed portion of said metal wire. The protruding portion of the metal wire is then rounded using a chemical mechanical polishing (CMP) process. This process results in a wire that has a central portion C that is higher than that of its distil edge, and higher than the top surface of the insulator. During the polishing process no material from the central point of the wire is removed. The disclosed method can be used in the formation of integrated damascene inductors.