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公开(公告)号：US3868652A
公开(公告)日：1975-02-25
申请号：US37122773
申请日：1973-06-18
Applicant: IBM
Inventor： COOPER LAWRENCE , II LAWRENCE B , SHANG DAVID C T
CPC classification number: G11C11/22 , G11C11/5657 , G11C13/04 , G11C13/047
Abstract: An optical memory system utilizes a multi-layer ferroelectric optical memory or storage apparatus. Storage apparatus has plural storage locations, each of which includes a mutually-exclusive discrete region in each of the ferroelectric layers. The regions associated with a particular storage location are in optical coupling relationship with each other. Means are provided for selectively setting the birefringent level associated with each region of each storage location of each ferroelectric layer. The birefringent levels collectively set for the regions of each particular storage location are indicative of the digital information being stored in the particular storage location. The information is thus stored according to spatial and color criteria, i.e. in three dimensions. The memory system can be operated in conventional and/or in alterable read-only memory modes. In addition, the apparatus has low voltage switching characteristics.
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Patent Agency Ranking
公开(公告)号：US3859176A
公开(公告)日：1975-01-07
申请号：US33519973
申请日：1973-02-23
Applicant: IBM
Inventor： SHANG DAVID C T
CPC classification number: C25D3/56
Abstract: A thin film tungsten-thorium alloy is fabricated by a method utilizing an electroplating technique. In some applications, the W-Th alloy subsequently remains as a layer on the object on which it is deposited. In other applications, it is subsequently completely or partially removed from the object. Also, in applications where it is desired to have the W-Th alloy in a single crystal state, it is subsequently annealed.
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公开(公告)号：US3868172A
公开(公告)日：1975-02-25
申请号：US37122473
申请日：1973-06-18
Applicant: IBM
Inventor： II LAWRENCE B , SHANG DAVID C T
IPC: G02B5/20 , G02F1/03 , G02F1/05 , G02F1/055 , G11C11/22 , G11C11/42 , G11C11/56 , G11C13/04 , G02F1/26
CPC classification number: G11C13/047 , G02F1/055 , G11C11/22 , G11C11/5657 , G11C13/04
Abstract: Ferroelectric optical apparatus has a selectably variable spectral bandpass characteristic. The apparatus has ferroelectric multilayers interleaved with non-opaque selectively energizable conductors for this purpose. The apparatus has low voltage switching characteristics. Light filter and optical storage devices of the invention are also disclosed.
Abstract translation: 铁电光学装置具有可选择的光谱带通特性。 为了此目的，该装置具有与不透明的选择性激励导体交错的铁电多层。 该装置具有低电压开关特性。 还公开了本发明的光滤波器和光存储器件。
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公开(公告)号：CA1031072A
公开(公告)日：1978-05-09
申请号：CA201986
申请日：1974-06-07
Applicant: IBM
Inventor： COOPER LAWRENCE , II LAWRENCE B , SHANG DAVID C T
Abstract: 1424958 Data store INTERNATIONAL BUSINESS MACHINES CORP 24 April 1974 [18 June 1973] 17960/74 Heading G4C [Also in Divisions H3-H5] A single number, e.g. 0 to 15, is stored along one of a plurality of discrete spatial paths extending through a stack 60 of ferroelectric layers, Fig. 1, as a characteristic series of localized remanent potentials obtained by application to each layer of a selected potential from the group W1 1 . Fig. 7 shows the remanent birefringent properties of a ferroelectric layer 63, the degree of birefringence being determined by a write potential W1-W4, while birefringence is removed by an appropriate erase potential E1-E4. To write into the store a potential Vx is applied over leads 66, 67 to section 60A, and selected write potentials of amplitude Va-Vd are applied over leads 68-75 to sections 60B-60E. Thus to write the number 6, for example, section 60B is placed at a potential Vd, section 60C is placed at potential Vc and sections 60D, 50E are at zero potential. These potentials are applied from a storage energizer and control circuit 40, Fig. 1. The discrete region in each ferroelectric layer where a birefringence state is to be established is determined by the path taken by the light beam, this beam causing a localized conduction of each photo-conductive layer 62A which effectively couples the correspondingly localized regions of the electrodes 62B with the ferroelectric layers. A similar combination of appropriate potentials E1-E4 and a light beam is used for selective erasure. Each writing or erasure operation is followed by a verification test in which the photo-detector output to the encoder is compared by a comparator with the write or erase instruction. Control circuit detals are disclosed, Figs. 4, 5, 6 and 8 (not shown).
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公开(公告)号：CA1037414A
公开(公告)日：1978-08-29
申请号：CA184353
申请日：1973-10-26
Applicant: IBM
Inventor： SHANG DAVID C T
Abstract: METHOD FOR MAKING THIN FILM TUNGSTEN-THORIUM ALLOY A thin film tungsten-thorium alloy is fabricated by a method using an electroplating technique. A conductive substrate is situated in a heated plating bath and forms the cathode of the electrical system. The plating bath comprises a first aqueous solution consisting of WO3, Na3PO4 and H2O. The thin film of tungsten-thorium alloy is formed by concurrently passing electrical current through the heated plating bath containing the substrate and adding a second aqueous solution consisting of Th(SO4)2 and H2O to the first solution at a predetermined rate. In some applications, the W-Th alloy subsequently remains as a layer on the object on which it is deposited. In other applications, it is subsequently completely or partially removed from the object. Also, in applications where it is desired to have the W-Th alloy in a single crystal state, it is subsequently annealed.
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