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    Multi-layer ferroelectric optical memory system
    1.
    发明授权
    Multi-layer ferroelectric optical memory system 失效
    多层电磁光记录系统

    公开(公告)号：US3868652A

    公开(公告)日：1975-02-25

    申请号：US37122773

    申请日：1973-06-18

    Applicant: IBM

    Inventor： COOPER LAWRENCE ,  II LAWRENCE B ,  SHANG DAVID C T

    IPC: G11C11/42 ,  G02F1/03 ,  G02F1/05 ,  G11C11/22 ,  G11C11/56 ,  G11C13/04

    CPC classification number: G11C11/22 ,  G11C11/5657 ,  G11C13/04 ,  G11C13/047

    Abstract: An optical memory system utilizes a multi-layer ferroelectric optical memory or storage apparatus. Storage apparatus has plural storage locations, each of which includes a mutually-exclusive discrete region in each of the ferroelectric layers. The regions associated with a particular storage location are in optical coupling relationship with each other. Means are provided for selectively setting the birefringent level associated with each region of each storage location of each ferroelectric layer. The birefringent levels collectively set for the regions of each particular storage location are indicative of the digital information being stored in the particular storage location. The information is thus stored according to spatial and color criteria, i.e. in three dimensions. The memory system can be operated in conventional and/or in alterable read-only memory modes. In addition, the apparatus has low voltage switching characteristics.

    MULTI-LAYER FERROELECTRIC OPTICAL MEMORY SYSTEM
    4.
    发明专利
    MULTI-LAYER FERROELECTRIC OPTICAL MEMORY SYSTEM 未知

    公开(公告)号：CA1031072A

    公开(公告)日：1978-05-09

    申请号：CA201986

    申请日：1974-06-07

    Applicant: IBM

    Inventor： COOPER LAWRENCE ,  II LAWRENCE B ,  SHANG DAVID C T

    IPC: G11C11/42 ,  G02F1/03 ,  G02F1/05 ,  G11C11/22 ,  G11C11/56 ,  G11C13/04 ,  G11C13/08

    Abstract: 1424958 Data store INTERNATIONAL BUSINESS MACHINES CORP 24 April 1974 [18 June 1973] 17960/74 Heading G4C [Also in Divisions H3-H5] A single number, e.g. 0 to 15, is stored along one of a plurality of discrete spatial paths extending through a stack 60 of ferroelectric layers, Fig. 1, as a characteristic series of localized remanent potentials obtained by application to each layer of a selected potential from the group W1 1 . Fig. 7 shows the remanent birefringent properties of a ferroelectric layer 63, the degree of birefringence being determined by a write potential W1-W4, while birefringence is removed by an appropriate erase potential E1-E4. To write into the store a potential Vx is applied over leads 66, 67 to section 60A, and selected write potentials of amplitude Va-Vd are applied over leads 68-75 to sections 60B-60E. Thus to write the number 6, for example, section 60B is placed at a potential Vd, section 60C is placed at potential Vc and sections 60D, 50E are at zero potential. These potentials are applied from a storage energizer and control circuit 40, Fig. 1. The discrete region in each ferroelectric layer where a birefringence state is to be established is determined by the path taken by the light beam, this beam causing a localized conduction of each photo-conductive layer 62A which effectively couples the correspondingly localized regions of the electrodes 62B with the ferroelectric layers. A similar combination of appropriate potentials E1-E4 and a light beam is used for selective erasure. Each writing or erasure operation is followed by a verification test in which the photo-detector output to the encoder is compared by a comparator with the write or erase instruction. Control circuit detals are disclosed, Figs. 4, 5, 6 and 8 (not shown).

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