公开(公告)号：DE2421122A1

公开(公告)日：1975-01-09

申请号：DE2421122

申请日：1974-05-02

Applicant: IBM

Inventor： II LAWRENCE BURTON ,  COOPER LAWRENCE ,  SHANG DAVID CHING-TING

IPC: G02F1/05 ,  G11C11/22 ,  G11C11/56 ,  G11C13/04 ,  G11C13/06

Abstract: A storage element is formed using ferromagnetic components, which are read by light waves acting on photo-electric sensors. The light waves are arranged to travel through polarisers before they impinge on the sensors, and consequently addressing takes place, since the route taken by the light waves is dependent on the configuration of the polarisers at the time. Filters may be interposed in the light path to increase the selection range of the addressing. The arrangement is extremely small compared to conventional systems.

公开(公告)号：DE2356958A1

公开(公告)日：1974-08-29

申请号：DE2356958

申请日：1973-11-15

Applicant: IBM

Inventor： SHANG DAVID CHING-TING

IPC: H05K3/24 ,  C25D3/56 ,  H01J9/04 ,  H01K3/02 ,  C23B5/30 ,  C23F1/02

Abstract: 1424252 Electro-plating tungsten-thorium alloy INTERNATIONAL BUSINESS MACHINES CORP 11 Oct 1973 [23 Feb 1973] 47439/73 Heading C7B [Also in Divisions G5 and H1] A thin-film alloy of W-Th is electro-plated on a substrate of which at least part is conductive from a heated aqueous solution containing WO 3 and Na 3 PO 4 , to which is gradually added aqueous Th(SO 4 ) 2 during plating. The basic substrate may be temporary, semitemporary or permanent. As described, a Cu layer 6 on Al 2 O 3 base 4, through which project electro-deposited Au pins 5 with their other ends flush with the Cu surface, is coated with a photo-resist to leave conductive paths 6' connecting pairs of posts 5. The W-Th alloy is deposited on 6' and the Cu etched away leaving the alloy supported on the posts in a form useful as part of a rectangular array of similar films in an incandescent filament character display device. Alternatively the entire Cu layer may be W-Th plated, a resist applied as before and the unwanted Cu and Th-W alloy etched, the latter with NaOH-K 3 Fe(CN) 6 . Plating conditions specified are a temperature of 80‹C, a c.d. of 160 mA/cm 2 for 10-30 mins, with addition of 20 drops/min of 10% w/w Th(SO 4 ) 2 solution. The alloy may be annealed to the single crystal state.