公开(公告)号：DE2536624A1

公开(公告)日：1976-03-04

申请号：DE2536624

申请日：1975-08-16

Applicant: IBM

Inventor： GREGOR LAWRENCE VINCENT ,  SHEPHEARD ROBERT GEORGE

IPC: H01L25/18 ,  H01L21/60 ,  H01L23/06 ,  H01L23/14 ,  H01L23/15 ,  H01L23/52 ,  H01L23/538 ,  H01L25/04 ,  H01L27/04

Abstract: 1477544 Semiconductor assemblies INTERNATIONAL BUSINESS MACHINES CORP 20 May 1975 [19 Aug 1974] 21597/75 Headings H1K and H1R A semiconductor assembly comprises a monocrystalline silicon member 16, in particular a silicon integrated circuit device, provided with a plurality of electrical contacts, a silicon nitride (Si 3 N 4 ) support substrate 10, Fig. 2, having co-efficient of thermal expansion closely corresponding to that of the silicon member and electrical contacts registering with the contacts of the silicon member, the contacts of the substrate and the silicon member being electrically joined by metallurgical bonds 17, e.g. solder bonds or ultrasonic solid bonds, so that the substrate and the silicon member are spared from each other; and an electrically conductive pattern 14 on the substrate 10 providing external connections. In the embodiment of Fig. 3, silicon integrated circuit devices 16 are bonded to a moncrystalline silicon member 20 in the manner described above, there being interconnection pattern formed on the member 20 by utilizing known masking and diffusion techniques or by depositing a conductive pattern or an insulating layer on the silicon member, and the silicon member 20 is in turn mounted on the silicon nitride support substrate through solder bonds or ultrasonic solid bonds 26. Pins 12 may be provided on the substrate for providing electrical connectons with a card or board 24. The substrate 10 is formed by compacting silicon nitride particles into the desired shape and sintering, on it may be formed by deposition.