公开(公告)号：DE2724346A1

公开(公告)日：1978-01-05

申请号：DE2724346

申请日：1977-05-28

Applicant: IBM

Inventor： DOUGHERTY JUN WILLIAM EDWIN ,  GREGOR LAWRENCE VINCENT ,  KLEIN DONALD LEE ,  REDMOND THOMAS FRANCIS

IPC: H05K7/20 ,  F25D9/00 ,  G12B15/02 ,  H01L23/427 ,  H01L23/44

Abstract: A device for removing contaminant impurities, particularly contaminants existing at very low levels, from a liquid, including a heating element at least partially immersible in the liquid, a confinement means at least partially immersible in the liquid for maintaining a pulsating bubble of vapor of the liquid, the heating element located within the confining means, openings in the confining means to allow periodic partial escape of the vapor bubble and ingress of liquid.

公开(公告)号：DE2536624A1

公开(公告)日：1976-03-04

申请号：DE2536624

申请日：1975-08-16

Applicant: IBM

Inventor： GREGOR LAWRENCE VINCENT ,  SHEPHEARD ROBERT GEORGE

IPC: H01L25/18 ,  H01L21/60 ,  H01L23/06 ,  H01L23/14 ,  H01L23/15 ,  H01L23/52 ,  H01L23/538 ,  H01L25/04 ,  H01L27/04

Abstract: 1477544 Semiconductor assemblies INTERNATIONAL BUSINESS MACHINES CORP 20 May 1975 [19 Aug 1974] 21597/75 Headings H1K and H1R A semiconductor assembly comprises a monocrystalline silicon member 16, in particular a silicon integrated circuit device, provided with a plurality of electrical contacts, a silicon nitride (Si 3 N 4 ) support substrate 10, Fig. 2, having co-efficient of thermal expansion closely corresponding to that of the silicon member and electrical contacts registering with the contacts of the silicon member, the contacts of the substrate and the silicon member being electrically joined by metallurgical bonds 17, e.g. solder bonds or ultrasonic solid bonds, so that the substrate and the silicon member are spared from each other; and an electrically conductive pattern 14 on the substrate 10 providing external connections. In the embodiment of Fig. 3, silicon integrated circuit devices 16 are bonded to a moncrystalline silicon member 20 in the manner described above, there being interconnection pattern formed on the member 20 by utilizing known masking and diffusion techniques or by depositing a conductive pattern or an insulating layer on the silicon member, and the silicon member 20 is in turn mounted on the silicon nitride support substrate through solder bonds or ultrasonic solid bonds 26. Pins 12 may be provided on the substrate for providing electrical connectons with a card or board 24. The substrate 10 is formed by compacting silicon nitride particles into the desired shape and sintering, on it may be formed by deposition.

公开(公告)号：DE3175092D1

公开(公告)日：1986-09-18

申请号：DE3175092

申请日：1981-03-06

Applicant: IBM

Inventor： BRADY MICHAEL JOHN ,  GREGOR LAWRENCE VINCENT ,  JOHNSON MARK

IPC: F16C32/00 ,  G02B6/35 ,  G02B26/02 ,  G02B26/08 ,  H02K44/02 ,  G02B6/24 ,  G02F1/00

公开(公告)号：DE1244262B

公开(公告)日：1967-07-13

申请号：DEJ0024889

申请日：1963-12-10

Applicant: IBM

Inventor： GREGOR LAWRENCE VINCENT ,  WHITE PETER

IPC: C23C14/04 ,  C23F1/02 ,  H01L21/00 ,  H01L21/033 ,  H01L21/308 ,  H01L21/321 ,  H01L21/3213 ,  H01L27/00 ,  H01L49/02

Abstract: An electric circuit element, e.g. a cryotron, is formed by a photolysis process. As shown, a glass substrate 42 is given a lead coating from a source 24, a silicon monoxide coating from a source 26, then a tin coating. The coatings are made through a mask 52. The holder 42 is then rotated though 180 degrees, gaseous nitromethane fed into the evacuated chamber 10, and a light source 76 energized to direct ultraviolet light through a mask 74 on to the tin coating, so that the parts of the coating exposed to the light are converted to an etch resistant pattern. The light passes through a quartz pipe 72, the temperature of which is controlled by a heating wire 80 and a cooling coil 85. The nitromethane is then removed by suction and the coatings etched either in situ by a vapour phase etchant, e.g. hydrogen chloride, or by removing the substrate and placing it in a liquid etchant, e.g. nitric acid. After etching, the holder 42 is again rotated through 180 degrees and further coatings of silicon monoxide and lead applied. In a modification, Fig. 2B (not shown), a semi-conductor circuit is formed by depositing germanium on a substrate, forming a pattern with nitromethane and etching. Interconnection lines of zinc and antimony are applied and the whole heated to diffuse some of the material of the lines into the germanium. The films which may be used in this process are: (1) Group IV and transition metal elements, e.g. Sn, Ge, Si, Fe, Pb; (2) binary alloy films of Group IV elements, e.g. Sn-Ge, Pb-Sn, Ge-Si, Pb-Ge, and binary alloys of transition elements, e.g. Ni-Fe, Ti-Fe; (3) intermetallic compounds of Group II-V, III-V, II-VI and III-VI elements such as GaAs, CdS, ZnP, InTe, GaP, InSe, InAs. The gas used for photolysis may be inorganic, e.g. nitrogen dioxide, dinitrogen tetroxide, chlorine dioxide, and a mixture of nitrous oxide and oxygen or organic, e.g. R-NO2, where R is selected from the group methyl, ethyl, propyl, iso-propyl, butyl, isobutyl, tert.-butyl and sec.-butyl or halo-alkanes (methylene chloride), nitroaryl (nitrobenzene), nitroalkylaryl (nitrotoluene) and haloaromatic (phenyl chloride).