公开(公告)号：DE60213086T2

公开(公告)日：2006-12-28

申请号：DE60213086

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ROBERT ,  HAY C ,  HEDRICK CURTIS ,  LEE KANG-WOOK ,  LINIGER GERHARD ,  SIMONYI ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

公开(公告)号：DE60213086D1

公开(公告)日：2006-08-24

申请号：DE60213086

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ROBERT ,  HAY C ,  HEDRICK CURTIS ,  LEE KANG-WOOK ,  LINIGER GERHARD ,  SIMONYI ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.