公开(公告)号：EP1470447A4

公开(公告)日：2007-10-10

申请号：EP02784585

申请日：2002-11-25

Applicant: IBM

Inventor： RANKIN JED H ,  SCHNEIDER CRAIN E ,  SMYTH JOHN S ,  WATTS ANDREW J

IPC: G03C5/00 ,  G01D18/00 ,  G03F7/20 ,  G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  H01L21/027

CPC classification number: G03F7/70508 ,  G03F7/70558

Abstract: A method of implementing a new reticle for manufacturing semiconductor devices on a wafer which involves performing measurements (420) on the reticle and assigning an initial exposure dose (470) by using a predetermined algorithm (450). The exposure control system (490) utilizes reticle CD data (430, 440) for automatically calculating reticle exposure offset values, i.e. reticle factors (510). A correlation of reticle size deviations (500) to calculated reticle factors (510) is used to derive a reticle factor (510) for the new reticle. The derived reticle factor (510) is then used to predict (450) an initial exposure condition for the new reticle which is applied (470) to the lithography tool (410) for achieving a wafer design dimension.

公开(公告)号：AU2002346519A1

公开(公告)日：2003-06-17

申请号：AU2002346519

申请日：2002-11-25

Applicant: IBM

Inventor： RANKIN JED H ,  SCHNEIDER CRAIN E ,  SMYTH JOHN S ,  WATTS ANDREW J

IPC: G03F7/20 ,  H01L21/027 ,  G03C5/00 ,  G01D18/00 ,  G06F17/50 ,  G06F19/00 ,  G21K5/00

公开(公告)号：DE60229299D1

公开(公告)日：2008-11-20

申请号：DE60229299

申请日：2002-11-25

Applicant: IBM

Inventor： RANKIN JED H ,  SCHNEIDER CRAIN E ,  SMYTH JOHN S ,  WATTS ANDREW J

IPC: G03C5/00 ,  G01D18/00 ,  G03F7/20 ,  G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  H01L21/027