公开(公告)号：JPH10247722A

公开(公告)日：1998-09-14

申请号：JP849598

申请日：1998-01-20

Applicant: IBM

Inventor： DAVID E KOTEKKI ,  SON V GUEN

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/92

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor structure which contains high-permittivity insulating material having high memory change and electrostatic capacitance. SOLUTION: A semiconductor device is equipped with a capacitor which contains insulating material in high permittivity and charge hold capacity. The above insulating material is represented by a formula, (A )x (A )2-x (D)d (B )y (B )1-y O4 , where, A and A are cations, B and B are anions, x is so set as to satisfy a condition, 0 and A denote different atoms, y is so set as to satisfy a condition, 0 and B denote different atoms, D denotes dopant which is optionally selected, and the total amount of D is represented by a condition, 0