公开(公告)号：DE69323628T2

公开(公告)日：1999-09-30

申请号：DE69323628

申请日：1993-04-29

Applicant: IBM

Inventor： GRECO STEPHEN E ,  SRIKRISHNAN KRIS

IPC: H01L21/768 ,  H01L23/12 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485

Abstract: An integrated circuit having organic dielectric between interconnection layers eliminates damage caused by vapors outgassing from the organic dielectric by the use of a two-component organic layer having a breathable etch resistant organic layer above the main organic dielectric layer, both of the organic layers remaining in the final circuit. The etch resistant layer is resistant to the etchant used to pattern the layer of interconnect above the organic dielectric.

公开(公告)号：DE69323628D1

公开(公告)日：1999-04-01

申请号：DE69323628

申请日：1993-04-29

Applicant: IBM

Inventor： GRECO STEPHEN E ,  SRIKRISHNAN KRIS

IPC: H01L21/768 ,  H01L23/12 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485

Abstract: An integrated circuit having organic dielectric between interconnection layers eliminates damage caused by vapors outgassing from the organic dielectric by the use of a two-component organic layer having a breathable etch resistant organic layer above the main organic dielectric layer, both of the organic layers remaining in the final circuit. The etch resistant layer is resistant to the etchant used to pattern the layer of interconnect above the organic dielectric.