公开(公告)号：DE3072023D1

公开(公告)日：1987-10-08

申请号：DE3072023

申请日：1980-12-12

Applicant: IBM

Inventor： ANANTHA NARASIPUR GUNDAPPA ,  SRINIVASAN GURUMAKONDA RAMASWA

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/312 ,  H01L21/331 ,  H01L21/762 ,  H01L29/04 ,  H01L29/73

Abstract: The method starts from a monocrystalline semiconductor substrate (2) having a highly doped region (1), and being covered by an oxide mask (3) which is apertured above region (1). A layer (6) of polysilicon is deposited over oxide mask (3). The structure is exposed to laser radiation (14) to convert layer (6) into monocrystalline silicon within and above the oxide apertures. The method is useful in making filamentary pedestal transistors without extrinsic base-collector junctions. In this present case, region (1) serves as a subcollector, two polycrystalline areas are made monocrystalline, with the one area(4) and the polycrystalline area (7) surrounding it being doped with a base dopant, and the other area (5) being made the collector reach-through region. The upper portion (10) of area (4) is made the emitter.

公开(公告)号：DE2960880D1

公开(公告)日：1981-12-10

申请号：DE2960880

申请日：1979-05-07

Applicant: IBM

Inventor： SRINIVASAN GURUMAKONDA RAMASWA

IPC: C30B25/02 ,  C30B29/06 ,  H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L29/78 ,  C30B25/10

Abstract: A method is described for depositing silicon epitaxy with very low defect levels and sharp dopant profiles which are suitable for fabricating high performance, shallow device structures. The epitaxial layer envisioned is less than about 2 microns in thickness. The layer is deposited upon a silicon substrate that has subcollector buried layers therein of above about 1x1020 N type impurity. The substrate is baked at between about 1120 DEG to 1180 DEG C. in hydrogen and then the epitaxial layer is formed using silicon tetrachloride and a temperature of between about 1000 DEG to 1100 DEG C. thereon.