Patent search ap:("IBM") AND inv:"STAMPER ANTHONY L" Page 1

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发明专利
Copper interconnection structure for semiconductor memory, logic circuits, involves exposing interactive connection structure with copper layer to reduction plasma and forming silicon nitride film 未知

公开(公告)号：DE19963864A1

公开(公告)日：2000-08-10

申请号：DE19963864

申请日：1999-12-30

Applicant: IBM

Inventor： AGNELLOC PAUL D , BUCHWALTER LEENA P , HUMMEL JOHN , LUTHER BARBARA , STAMPER ANTHONY L

IPC: H01L23/522 , H01L21/04 , H01L21/28 , H01L21/318 , H01L21/768 , H01L21/314

Abstract: The interactive copper interconnection is exposed to reduction plasma containing hydrogen, nitrogen, ammonia, noble gas or their mixtures. Then, silicon nitride film is formed on the interconnection structure. The exposure improves adhesive property of the nitride film towards copper interconnection structure.

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