公开(公告)号：EP1883961A4

公开(公告)日：2012-12-05

申请号：EP06759690

申请日：2006-05-12

Applicant: IBM

Inventor： CASEY JON A ,  BERGER MICHAEL ,  BUCHWALTER LEENA P ,  CANAPERI DONALD F ,  HORTON RAYMOND R ,  JAIN ANURAG ,  PERFECTO ERIC D ,  TORNELLO JAMES A

IPC: H01L23/14 ,  H01L21/48 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2006124607A3

公开(公告)日：2007-04-12

申请号：PCT/US2006018458

申请日：2006-05-12

Applicant: IBM ,  CASEY JON A ,  BERGER MICHAEL ,  BUCHWALTER LEENA P ,  CANAPERI DONALD F ,  HORTON RAYMOND R ,  JAIN ANURAG ,  PERFECTO ERIC D ,  TORNELLO JAMES A

Inventor： CASEY JON A ,  BERGER MICHAEL ,  BUCHWALTER LEENA P ,  CANAPERI DONALD F ,  HORTON RAYMOND R ,  JAIN ANURAG ,  PERFECTO ERIC D ,  TORNELLO JAMES A

IPC: H01L23/22 ,  H01L23/04 ,  H01L23/14 ,  H01L23/24

CPC classification number: H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Sealing a via using a soventless, low viscosity, high temperature stable polymer or a high solids content polymer solution of low viscosity, where the polymeric material is impregnated within the via (100) at an elevated temperature, A supply chamber (630) is introduced to administer the polymeric material at an elevated temperature, typically at a temperature high enough to liquefy the polymeric material. The polymeric material is introduced through heated supply lines under force from a pump, piston, or a vacuum held within said supply chamber.

Abstract translation: 使用无粘性，低粘度，高温稳定的聚合物或低粘度的高固含量聚合物溶液密封通孔，其中聚合物材料在高温下浸渍在通孔（100）内，引入供应室（630） 以在升高的温度下施用聚合物材料，通常在高至足以液化聚合物材料的温度下。 聚合物材料通过来自泵，活塞或保持在所述供应室内的真空的力的加热供应管线引入。

公开(公告)号：DE19963864A1

公开(公告)日：2000-08-10

申请号：DE19963864

申请日：1999-12-30

Applicant: IBM

Inventor： AGNELLOC PAUL D ,  BUCHWALTER LEENA P ,  HUMMEL JOHN ,  LUTHER BARBARA ,  STAMPER ANTHONY L

IPC: H01L23/522 ,  H01L21/04 ,  H01L21/28 ,  H01L21/318 ,  H01L21/768 ,  H01L21/314

Abstract: The interactive copper interconnection is exposed to reduction plasma containing hydrogen, nitrogen, ammonia, noble gas or their mixtures. Then, silicon nitride film is formed on the interconnection structure. The exposure improves adhesive property of the nitride film towards copper interconnection structure.