公开(公告)号：DE1696075A1

公开(公告)日：1971-11-18

申请号：DE1696075

申请日：1968-02-12

Applicant: IBM

Inventor： LAWRENCE GARWIN RICHARD ,  STANLEY NOWICK ARTHUR

IPC: H01L21/00 ,  H01L21/288 ,  H01L23/522 ,  H01L27/01 ,  H01L49/02 ,  C23B5/62

Abstract: 1,176,889. Semi-conductor arrangement. INTERNATIONAL BUSINESS MACHINES CORP. 23 Jan., 1968 [14 Feb., 1967], No. 3382/68. Heading H1K. [Also in Division C6] A pattern of conductivity is formed on an amorphous substrate by transforming selected portions on the surface thereof into crystalline form and electro-plating a conductive material on to said portions. The amorphous substrate may be of semi-conductor material, e.g. germanium or silicon, and may be doped. The selected portions may be transformed into crystalline form by heating said portions, e.g. with a laser beam or an electron beam. The plating may be carried out electrolytically, e.g. copper or silver may be electroplated on to a germanium substrate from cyanide baths. A doped amorphous substrate may be formed on a base material, e.g. of quartz, by vapour deposition of substrate and dopant from separate sources using rate monitoring devices to maintain the proper ratio between the two evaporations, or by using a doped starting material of such composition to give the required deposit (this will not be an identical composition).

公开(公告)号：DE1483246A1

公开(公告)日：1969-09-18

申请号：DE1483246

申请日：1965-08-28

Applicant: IBM

Inventor： MADER SIEGFRIED ,  STANLEY NOWICK ARTHUR ,  WIDMER HANS

IPC: B22D11/06 ,  C22C45/00 ,  C23C14/14 ,  C23C14/18 ,  C23C14/26 ,  C23C14/32 ,  C23C14/54 ,  H01B1/00 ,  H01C3/00 ,  H01F1/153 ,  H01L39/00 ,  H01V11/12

Abstract: An amorphous alloy which is metastable at room temperature and which includes two components which have a size factor in the range 10% to 25%, an insolubility range greater than 75%, and an average melting temperature greater than 750 DEG C., is made by deposition from vapour on to a substrate. Specified alloys are, in atomic percent, Cu, 35-65 Ag Cu, 20-90 Mg Au, 75 Mg Co, 17 or 50 Ag. Reference is also made to the production of the superconductive alloys NbSn and NbZr. The vacuum deposition apparatus shown is used for the production of a binary alloy by simultaneous evaporation of its components A, B from electrically heated sources 22, 24. Evaporation rates are controlled in response to ionization gauges 32, 34, and 50, 52. Charged particles are suppressed by grids 40, 42. The substrate, which may be a sapphire plate carrying a layer of collodion or silicon oxide, is mounted in liquid nitrogen-cooled housing 86, and its resistivity and temperature are monitored. The amorphous alloys have utility in thin film form for computer elements and control circuits.