公开(公告)号：SG97159A1

公开(公告)日：2003-07-18

申请号：SG200004133

申请日：2000-07-24

Applicant: IBM

Inventor： STEPHAN A COHEN ,  CLAUDIUS FEGER ,  JEFFREY CURTIS HEDRICK ,  JANE MARGARET SHAW

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/20 ,  H01L21/314 ,  H01L23/532 ,  H01L29/51 ,  H01L23/58 ,  H01L23/48

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.