-
1.
公开(公告)号:JP2001085419A
公开(公告)日:2001-03-30
申请号:JP2000236834
申请日:2000-08-04
Applicant: IBM
Inventor: STEPHAN ALAN COEN , CLADIUS FEEGAA , HEDRICK JEFFREY CURTIS , SHAW JANE MARGARET
IPC: H01L21/20 , H01L21/28 , H01L21/312 , H01L21/314 , H01L23/532 , H01L29/51
Abstract: PROBLEM TO BE SOLVED: To reduce Cu ion migration by allowing an interlayer dielectrics to comprise a dielectric material whose permittivity is a specified value or below as well as additives, and combining the additives to the Cu ion. SOLUTION: An interlayer dielectrics 12 is formed on a substrate 10, comprising such semiconductor material as Si, Ge, GaAs, InAs, InP, or other III/V compound. The interlayer dielectrics 12 comprises such amount of additives as effective for combination with Cu ion, as well as a dielectrics of low permittivity which comprises polyimide, polyamide, diamond, diamond-like carbon, silicon-contained polymer, polyallylene ether, paralien polymer, and organic dielectric material of permittivity 3.0 or below. Thus, Cu ion migration is reduced.