公开(公告)号：JP2001085419A

公开(公告)日：2001-03-30

申请号：JP2000236834

申请日：2000-08-04

Applicant: IBM

Inventor： STEPHAN ALAN COEN ,  CLADIUS FEEGAA ,  HEDRICK JEFFREY CURTIS ,  SHAW JANE MARGARET

IPC: H01L21/20 ,  H01L21/28 ,  H01L21/312 ,  H01L21/314 ,  H01L23/532 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To reduce Cu ion migration by allowing an interlayer dielectrics to comprise a dielectric material whose permittivity is a specified value or below as well as additives, and combining the additives to the Cu ion. SOLUTION: An interlayer dielectrics 12 is formed on a substrate 10, comprising such semiconductor material as Si, Ge, GaAs, InAs, InP, or other III/V compound. The interlayer dielectrics 12 comprises such amount of additives as effective for combination with Cu ion, as well as a dielectrics of low permittivity which comprises polyimide, polyamide, diamond, diamond-like carbon, silicon-contained polymer, polyallylene ether, paralien polymer, and organic dielectric material of permittivity 3.0 or below. Thus, Cu ion migration is reduced.