ACTIVE DEVICES USING THREADS
    1.
    发明公开
    ACTIVE DEVICES USING THREADS 审中-公开
    有源器件的使用线程的

    公开(公告)号:EP1390991A4

    公开(公告)日:2007-10-31

    申请号:EP02731116

    申请日:2002-03-08

    Applicant: IBM

    Abstract: Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiply thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread device is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more thread or an elongated body disposed between two of the threads. For example, a FET (50) is formed of three threads, of which carried a gate insulator layer (74) and a semiconductor layer (72) and the other two (58,60) of which are electrically conductive and serve as the source (58) and drain (60). The substrates or threads are preferably flexible and can be formed in a fabric.

    4.
    发明专利
    未知

    公开(公告)号:DE69431394D1

    公开(公告)日:2002-10-24

    申请号:DE69431394

    申请日:1994-12-21

    Applicant: IBM

    Abstract: A microwave processing system is provided wherein the material to be processed is in the form of a web type quantity configuration with a thickness that is small in relation to the wavelength of a particular microwave frequency. The material is passed through the field associated with a plurality of microwave standing waves of the particular frequency, each adjacent standing wave being offset 1/4 wavelength along the direction of movement of the web. A carrier gas removes volatile solvents from the material surfaces. Control is provided for the interrelationship of temperature, rate of movement, flow of carrier gas, and microwave power.

    7.
    发明专利
    未知

    公开(公告)号:DE3785322D1

    公开(公告)日:1993-05-13

    申请号:DE3785322

    申请日:1987-12-23

    Applicant: IBM

    Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chromium. The structure is used as multi-density photomasks for example. The process for fabricating multi-layer structure, like a multi-density photomask comprises: a) providing a transparent dielectric substrate having a steel layer and a layer of a metal, like of copper, thereon with the layer of said steel is deposited on top of said layer of a metal or vice versa; b) providing a layer of photoresist material on top of the structure provided in step (a); c) exposing and developing said layer of photoresist material; d) selectively etching exposed portion of said metal or said steel; e) selectively etching exposed portion of said metal or said steel not etched in step (d); f) exposing and developing photoresist on the said layer of said metal or said steel etched in step (d); g) selectively etching exposed portion of said metal or said steel of step (f); and h) removing the photoresist. t

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