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公开(公告)号:EP1390991A4
公开(公告)日:2007-10-31
申请号:EP02731116
申请日:2002-03-08
Applicant: IBM
Inventor: SOLOMON PAUL MICHAEL , SHAW JANE MARGARET , KAGAN CHERIE R , DIMITRAKOPOULOS CHRISTOS DIMIT , NING TAK HUNG
IPC: D02G3/44 , H01L29/06 , H01L29/786 , H01L41/08 , H01L41/113 , H01L51/00 , H01L51/05 , H01L35/24 , B32B27/12 , H05B33/02
CPC classification number: D02G3/441 , H01L29/0657 , H01L51/0036 , H01L51/0512 , H02N2/18
Abstract: Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiply thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread device is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more thread or an elongated body disposed between two of the threads. For example, a FET (50) is formed of three threads, of which carried a gate insulator layer (74) and a semiconductor layer (72) and the other two (58,60) of which are electrically conductive and serve as the source (58) and drain (60). The substrates or threads are preferably flexible and can be formed in a fabric.
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公开(公告)号:JP2001085419A
公开(公告)日:2001-03-30
申请号:JP2000236834
申请日:2000-08-04
Applicant: IBM
Inventor: STEPHAN ALAN COEN , CLADIUS FEEGAA , HEDRICK JEFFREY CURTIS , SHAW JANE MARGARET
IPC: H01L21/20 , H01L21/28 , H01L21/312 , H01L21/314 , H01L23/532 , H01L29/51
Abstract: PROBLEM TO BE SOLVED: To reduce Cu ion migration by allowing an interlayer dielectrics to comprise a dielectric material whose permittivity is a specified value or below as well as additives, and combining the additives to the Cu ion. SOLUTION: An interlayer dielectrics 12 is formed on a substrate 10, comprising such semiconductor material as Si, Ge, GaAs, InAs, InP, or other III/V compound. The interlayer dielectrics 12 comprises such amount of additives as effective for combination with Cu ion, as well as a dielectrics of low permittivity which comprises polyimide, polyamide, diamond, diamond-like carbon, silicon-contained polymer, polyallylene ether, paralien polymer, and organic dielectric material of permittivity 3.0 or below. Thus, Cu ion migration is reduced.
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公开(公告)号:BR8600996A
公开(公告)日:1986-11-18
申请号:BR8600996
申请日:1986-03-07
Applicant: IBM
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公开(公告)号:DE69431394D1
公开(公告)日:2002-10-24
申请号:DE69431394
申请日:1994-12-21
Applicant: IBM
Inventor: HEDRICK JEFFREY CURTIS , LEWIS DAVID ANDREW , SHAW JANE MARGARET , VIEHBECK ALFRED , WHITEHAIR STANLEY JOSEPH
Abstract: A microwave processing system is provided wherein the material to be processed is in the form of a web type quantity configuration with a thickness that is small in relation to the wavelength of a particular microwave frequency. The material is passed through the field associated with a plurality of microwave standing waves of the particular frequency, each adjacent standing wave being offset 1/4 wavelength along the direction of movement of the web. A carrier gas removes volatile solvents from the material surfaces. Control is provided for the interrelationship of temperature, rate of movement, flow of carrier gas, and microwave power.
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公开(公告)号:DE69012873T2
公开(公告)日:1995-03-30
申请号:DE69012873
申请日:1990-03-13
Applicant: IBM
Inventor: HATZAKIS MICHAEL , SHAW JANE MARGARET , STEWART KEVIN JAY
IPC: G03F7/038 , C08G59/00 , C08G59/14 , C08G59/18 , G03F7/004 , G03F7/029 , G03F7/075 , H01L21/027 , H01L21/30
Abstract: A composition containing a polymeric material obtained by interreacting an epoxy-novolak polymer with an organosilicon compound, a radiation sensitive onium salt, and a near U.V. sensitizer.
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公开(公告)号:DE69012873D1
公开(公告)日:1994-11-03
申请号:DE69012873
申请日:1990-03-13
Applicant: IBM
Inventor: HATZAKIS MICHAEL , SHAW JANE MARGARET , STEWART KEVIN JAY
IPC: G03F7/038 , C08G59/00 , C08G59/14 , C08G59/18 , G03F7/004 , G03F7/029 , G03F7/075 , H01L21/027 , H01L21/30
Abstract: A composition containing a polymeric material obtained by interreacting an epoxy-novolak polymer with an organosilicon compound, a radiation sensitive onium salt, and a near U.V. sensitizer.
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公开(公告)号:DE3785322D1
公开(公告)日:1993-05-13
申请号:DE3785322
申请日:1987-12-23
Applicant: IBM
Inventor: FLAGELLO DONIS GEORGE , SHAW JANE MARGARET , WITMAN DAVID FRANK
IPC: G03F1/00 , G03F1/54 , H01L21/027
Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chromium. The structure is used as multi-density photomasks for example. The process for fabricating multi-layer structure, like a multi-density photomask comprises: a) providing a transparent dielectric substrate having a steel layer and a layer of a metal, like of copper, thereon with the layer of said steel is deposited on top of said layer of a metal or vice versa; b) providing a layer of photoresist material on top of the structure provided in step (a); c) exposing and developing said layer of photoresist material; d) selectively etching exposed portion of said metal or said steel; e) selectively etching exposed portion of said metal or said steel not etched in step (d); f) exposing and developing photoresist on the said layer of said metal or said steel etched in step (d); g) selectively etching exposed portion of said metal or said steel of step (f); and h) removing the photoresist. t
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公开(公告)号:DE3484271D1
公开(公告)日:1991-04-18
申请号:DE3484271
申请日:1984-12-11
Applicant: IBM
Abstract: A composition of matter is obtained by interreacting a quinone diazo compound and an organosilicon compound. Such a composition can be used as a resist in a lithographic process.
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