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公开(公告)号:JPH10340865A
公开(公告)日:1998-12-22
申请号:JP11653798
申请日:1998-04-27
Applicant: IBM
Inventor: GEFFKEN ROBERT M , STEPHEN E LUCE
IPC: H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To prevent copper from cansing corrosion on an interlevel dielectric oxide or other insulators, by etching a copper conductor wherein a via is formed in a dielectric layer in a substrate, in a directional etching step, and filling the via on the dielectric layer and the copper conductor with a conductor. SOLUTION: Oxide copper 4 is formed on the exposed surface of a copper wire 3 as a substrate, and an interlevel dielectric 2 wherein a via 1 is formed on the copper wire 3 is so laminated that the oxide copper 4 is exposed. After barrier material 5 is stuck on the surfaces of the interlevel dielectric 2, a side wall 6 and the oxide copper 4, the barrier material 5 is eliminated from the upper surface of the interlevel dielectric 2 by directional etching, and the barrier material 5 and the oxide copper 4 are eliminated from the bottom part of the via 1. After that, the via 1 in the interlevel dielectric 2 is filled with copper. Thereby oxide of the interlevel dielectric 2 or other insulators can be prevented from corrosion caused by the copper conductor.