公开(公告)号：JPH10340865A

公开(公告)日：1998-12-22

申请号：JP11653798

申请日：1998-04-27

Applicant: IBM

Inventor： GEFFKEN ROBERT M ,  STEPHEN E LUCE

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To prevent copper from cansing corrosion on an interlevel dielectric oxide or other insulators, by etching a copper conductor wherein a via is formed in a dielectric layer in a substrate, in a directional etching step, and filling the via on the dielectric layer and the copper conductor with a conductor. SOLUTION: Oxide copper 4 is formed on the exposed surface of a copper wire 3 as a substrate, and an interlevel dielectric 2 wherein a via 1 is formed on the copper wire 3 is so laminated that the oxide copper 4 is exposed. After barrier material 5 is stuck on the surfaces of the interlevel dielectric 2, a side wall 6 and the oxide copper 4, the barrier material 5 is eliminated from the upper surface of the interlevel dielectric 2 by directional etching, and the barrier material 5 and the oxide copper 4 are eliminated from the bottom part of the via 1. After that, the via 1 in the interlevel dielectric 2 is filled with copper. Thereby oxide of the interlevel dielectric 2 or other insulators can be prevented from corrosion caused by the copper conductor.