公开(公告)号：CA961582A

公开(公告)日：1975-01-21

申请号：CA151675

申请日：1972-09-14

Applicant: IBM

Inventor： ABBAS SHAKIR A ,  STERN PAUL G

IPC: G11C17/06 ,  G11C11/30 ,  G11C16/02 ,  G11C17/14 ,  H01L23/525

Abstract: An electronically rewritable read-only memory comprising an integrated semiconductor array of P-N junctions formed in a semiconductor substrate. A dielectric film is formed on the surface of the substrate on top of which a thin metallic film is deposited. The dielectric is thinner above an active region of each of the junctions than it is above the other regions of the substrate. When a suitable voltage is applied across the metallic film and dielectric, the metallic film diffuses through the dielectric film at the thinner areas, thereby forming ohmic via connections with the active junction regions. At the same time, the dielectric "self-heals" i.e., the via connections are disconnected from the metallic film around the periphery of the thin areas of the dielectric. A second layer of metallization over the metallic film establishes conductive contact between the layer and the active junction region. The contacts can be broken at selected junctions by passing a current through the diffused metallization. The contacts can be reestablished at selected junctions by applying a suitable healing voltage across the metallic film and the dielectric.