公开(公告)号：JP2001223340A

公开(公告)日：2001-08-17

申请号：JP2001014867

申请日：2001-01-23

Applicant: IBM

Inventor： KERRY BERNSTEIN ,  NICHOLAS THEODORE SCHMIDT ,  STAMPER ANTHONY K ,  STEVEN ARTHUR SAINT ONJI ,  STEVEN HOWARD VOLDMAN

IPC: H01G4/40 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To provide an interconnecting level capacitor structure and a forming method thereof. SOLUTION: The capacitor structure comprises a first insulating layer disposed on an interconnecting level surface of an integrated circuit, first and second conductors which are formed in the first insulating layer and are isolated by a trench delimited by the first insulating layer, a first conductive barrier layer which is disposed on the first and second conductors and connects the first and second conductors, a second insulting layer disposed on the first conductive barrier layer, a second conductive barrier layer disposed on the second insulating layer, and a third conductor which is disposed in the trench and on the second conductive barrier layer. A capacitance is increased by using regions on a top surface, a bottom surface, and a side surface of the capacitor structure. It is possible to obtain an on-cap decoupling capacitor having a larger size without sacrificing a precious silicon space.