公开(公告)号：JP2001332558A

公开(公告)日：2001-11-30

申请号：JP2001098341

申请日：2001-03-30

Applicant: IBM

Inventor： CARLOS J SANBASETSUTEI ,  STEVEN H BOECHER ,  PETER S LOCKE ,  JUDITH M RABINO ,  SUUN-CHEON SEO

IPC: H01L21/288 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide improved structure where a single layer having the integrity of a liner, and the electrical continuity between a related level and another metal one is given. SOLUTION: The structure of a semiconductor has a semiconductor dielectric material 1 having an opening. A first material 15 for backing the opening is composed of M, X, and Y. In this case, the M is selected from a group consisting of cobalt and nickel, the X is selected from a group consisting of tungsten and silicon, and the Y is selected from a group consisting of phosphor and boron. A second material 20 fills a backed dielectric material.

公开(公告)号：JP2002075913A

公开(公告)日：2002-03-15

申请号：JP2001197034

申请日：2001-06-28

Applicant: IBM

Inventor： ANDERICAKORS PANAYOITIS ,  STEVEN H BOECHER ,  MCFILY FENTON R ,  MILAN PAUNOVICH

IPC: H01L21/205 ,  C23C18/40 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method for interconnecting absolutely capsulated copper for an integrated circuit. SOLUTION: An electroless plating bath having a pH of at least 12.89 is used for allowing copper to adhere onto a barrier layer such as tungsten at an adhesion speed of 50 nm/minute or less. By using the method, a trench or via having an aspect ratio larger than 3 to 1 can become copper wiring with improved coherency.