公开(公告)号：DE2040761A1

公开(公告)日：1971-05-27

申请号：DE2040761

申请日：1970-08-17

Applicant: IBM

Inventor： EDWIN LEE ROBERT ,  STEVENSON MCDERMOTT PHILIP ,  SHIH-TO PAN EDWARD

IPC: H01L21/363 ,  H01L31/18 ,  B01J17/30

Abstract: An infrared sensitive photoconductive material is produced by growing a ternary compound of the formulation Hg(1-x) Cdx Te from a gaseous mixture of mercury, cadmium and tellurium onto a substrate which promotes polycrystalline growth and is chemically inert vis-a-vis the constituent gases. Suitable substrate materials are quartz, sapphire, and certain types of glass which are nonmeltable at growth temperatures of the ternary compound. The method preferably grows the polycrystalline material from a gaseous mixture of mercury, cadmium and tellurium heated to a temperature which inhibits binary combinations and then is rapidly cooled to supersaturation very close to the surface of a solid amorphous substrate material although crystalline substrates may be used provided the lattice structure in growth is incompatible with the lattice of the ternary compound.

公开(公告)号：DE1947382A1

公开(公告)日：1970-04-16

申请号：DE1947382

申请日：1969-09-19

Applicant: IBM

Inventor： RAYMOND CARPENTER DONALD ,  WAYNE MANLEY GERALD ,  STEVENSON MCDERMOTT PHILIP ,  JAMES RILEY RALPH

IPC: C30B23/02 ,  C23C14/06 ,  C30B25/02 ,  C30B29/48 ,  H01L21/365 ,  C23C13/08

公开(公告)号：DE1544200A1

公开(公告)日：1970-08-13

申请号：DE1544200

申请日：1964-12-17

Applicant: IBM

Inventor： STEVENSON MCDERMOTT PHILIP ,  WAYNE MANLEY GERALD ,  JAMES RILEY RALPH ,  ROBERT YETTER LAWRENCE

IPC: H01S5/30 ,  H01S5/32 ,  B01J17/28

Abstract: An homogeneous monocrystal of controlled composition for use in producing spontaneous and stimulated emission at controlled wavelengths comprises one element from Group IIIB of Mendeleef's Periodic Classification of the elements and two elements (one of which is either nitrogen, phosphorus or arsenic) from Group VB of the Classification. The crystal may have the composition In (AsxPxx) where 0 A method of producing an homogeneous monocrystal of controlled composition comprising one element from Group IIIB of Mendeleef's Periodic Classification of the Elements and two elements (one of which is either nitrogen, phosphorus or arsenic) from Group VB of the Classification, comprises placing a monocrystalline substrate cut along a crystallographic plane and having a lattice spacing similar to that of the moncrystal to be produced, together with ingots containing the selected elements, in a chamber containing a halogen atmosphere, e.g. iodine, heating and maintaining the chamber at a temperature between 750 DEG C. and 900 DEG C., controlling the temperature of the chamber during a first time interval so that the substrate is at a higher temperature than the ingots whereby the surfaces of the substrate are etched and spurious reaction products are prevented from being deposited therein and, controlling the temperature during a record time interval so that the ingots are at a higher temperature than the substrate whereby the selected elements are transported in a vapour phase and condensed on the substrate to produce the homogeneous crystal. The crystal may have the composition In(AsxP1-x) where 0

公开(公告)号：DE1944985A1

公开(公告)日：1970-05-27

申请号：DE1944985

申请日：1969-09-05

Applicant: IBM

Inventor： WAYNE MANLEY GERALD ,  SHISTO PAN EDWARD ,  JAMES RILEY RALPH ,  STEVENSON MCDERMOTT PHILIP

IPC: C01G11/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/48 ,  G03B21/64 ,  H01L21/365 ,  H01L7/36

Abstract: 1282168 Semi-conductors INTERNATIONAL BUSINESS MACHINES CORP 4 Sept 1969 [27 Sept 1968] 43734/69 Heading H1K [Also in Division C7] A cooled substrate 58 of, e.g. Cd-Te, Pb-Te or Sn-Te is coated with a ternary epitaxial film of a Group II-VI compound, e.g. Cd-Te-Hg by heating the elements and passing the vapours with a transport gas, which does not react with the vapours, e.g. hydrogen, argon or a mixture thereof, over the substrate, the temperature of the vapours being such as to inhibit binary reactions. In an example hydrogen from a source 13 is first vented through the apparatus, and the substrate back-etched, during this operation, the source furnaces 10, 12 are switched on and the heating coil 52 is moved against the coil 51 and both heated to the same temperature. The coils are then separated and with the sources furnaces 10, 11, 12 in operation vapours pass through the mixing furnace 14, having baffles 47, 48, 49, to the substrate. After deposition, the source furnace 12 is left on to prevent Hg volatilizing during cooling.