公开(公告)号：US3920483A

公开(公告)日：1975-11-18

申请号：US52711574

申请日：1974-11-25

Applicant: IBM

Inventor： JOHNSON JR CLAUDE ,  KU SAN-MEI ,  LILLJA HAROLD VINELL ,  SHIH-TO PAN EDWARD

IPC: H01L21/266 ,  G03F7/40 ,  H01L21/00 ,  H01L21/56 ,  H01L21/26

CPC classification number: H01L21/00 ,  G03F7/40 ,  H01L21/56 ,  H01L2924/0002 ,  Y10S148/131 ,  H01L2924/00

Abstract: An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.

Abstract translation: 通过光致抗蚀剂掩模将离子注入半导体衬底的方法的改进，其中在离子注入步骤之前对光致抗蚀剂掩模进行RF气体等离子体氧化一段足以减小光致抗蚀剂层厚度的时间。 然后通过经处理的光致抗蚀剂掩模进行离子注入。

公开(公告)号：DE2040761A1

公开(公告)日：1971-05-27

申请号：DE2040761

申请日：1970-08-17

Applicant: IBM

Inventor： EDWIN LEE ROBERT ,  STEVENSON MCDERMOTT PHILIP ,  SHIH-TO PAN EDWARD

IPC: H01L21/363 ,  H01L31/18 ,  B01J17/30

Abstract: An infrared sensitive photoconductive material is produced by growing a ternary compound of the formulation Hg(1-x) Cdx Te from a gaseous mixture of mercury, cadmium and tellurium onto a substrate which promotes polycrystalline growth and is chemically inert vis-a-vis the constituent gases. Suitable substrate materials are quartz, sapphire, and certain types of glass which are nonmeltable at growth temperatures of the ternary compound. The method preferably grows the polycrystalline material from a gaseous mixture of mercury, cadmium and tellurium heated to a temperature which inhibits binary combinations and then is rapidly cooled to supersaturation very close to the surface of a solid amorphous substrate material although crystalline substrates may be used provided the lattice structure in growth is incompatible with the lattice of the ternary compound.