公开(公告)号：JPH10229175A

公开(公告)日：1998-08-25

申请号：JP824898

申请日：1998-01-20

Applicant: IBM

Inventor： STUART MACRESTARR BURNS JR ,  HANAFI HUSSEIN I ,  JEFFREY J WELSER

IPC: H01L21/8242 ,  H01L21/8247 ,  H01L27/108 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a high-density array of vertical semiconductor elements having pillars, and a method of forming it. SOLUTION: An array has a column of bit lines 220, and a row of word lines 225. The gate of a transistor functions as a word line, and a source region 215 or a drain region 240 functions as a bit line. The array also has a vertical pillar 230, each of which has a channel made between the source region and the drain region. Two transistors can be made per pillar. The source region is arranged under the pillar, being self-aligned. The source regions of the adjacent bit lines are separated from each other, without increasing the cell size. The array structure can be used as a DRAM, EEPROM, or a flash memory.