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公开(公告)号：JPH10162327A
公开(公告)日：1998-06-19
申请号：JP27770597
申请日：1997-10-09
Applicant: IBM
Abstract: PROBLEM TO BE SOLVED: To provide a magnetic tunnel joining(MTJ) device which can function as a magnetic reluctance(MR) reading head linearly responding to a magnetic field from a recording medium. SOLUTION: The MTJ device is constituted of an antiferromagnetic layer 116, a fixed ferromagnetic layer 118 which is exchange-biased with the antiferromagnetic layer so that a magnetic moment cannot rotate even in the presence of an applied magnetic field 182, an insulating tunnel barrier layer 120 being in contact with the fixed ferromagnetic layer and a detection ferromagnetic layer 132 having the magnetic moment which is freely rotable in the presence of the applied magnetic field. Respective layers are rectangular shapes having parallel flank edges and the magnetic moment of the detection ferromagnetic layer 132 is bised in a longitudinal direction by a bias ferromagnetic layer 150 magnetostatically connected therewith in the absence of the applied magnetic field. An insulating layer 160 prevents shunt of a detection current and magnetostatically connects the bias ferromagnetic layer with the detection ferromagnetic layer without exerting adverse influence on the resistance of the MTJ MR head.
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2.发明专利
公开(公告)号：JPH10162326A
公开(公告)日：1998-06-19
申请号：JP27715697
申请日：1997-10-09
Applicant: IBM
Inventor： STUART STEPHAN PAPPWARTH PERKI
Abstract: PROBLEM TO BE SOLVED: To provide the element having high magnetic reluctance with a zero magnetic field by forming the element having a multilayered structure and a substrate formed with an insulating tunnel layer capable of passing a tunnel current in nearly a perpendicular direction to a free ferromagnetic layer and the free ferromagnetic layer. SOLUTION: A lower electrode 110 includes a boundary layer 114 consisting of Cr and the multilayered structure acting as a fixed ferromagnetic layer. The multilayered structure is formed of two layers; a hard ferromagnetic layer 117 having large coercive force and a thin boundary ferromagnetic layer 119. An upper electrode 130 formed on an alumina tunnel barrier layer 120 is Ni40 Fe60 or Co single layer usable as the free ferromagnetic layer 132. An electric lead layer 150 consisting of Al is formed on the free layer 132 consisting of Co without using a protective layer. The boundary ferromagnetic layer 119 exists at the boundary between the hard ferromagnetic layer 117 and the tunnel barrier 120. The boundary layer 119 is formed by using Co, Co-Fe alloy, Ni-Fe alloy, etc., and is so selected as to generate a powerful spin filter effect.
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