MAGNETIC TUNNEL JOINING DEVICE AND MAGNETIC RELUCTANCE READING HEAD

    公开(公告)号:JPH10162327A

    公开(公告)日:1998-06-19

    申请号:JP27770597

    申请日:1997-10-09

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic tunnel joining(MTJ) device which can function as a magnetic reluctance(MR) reading head linearly responding to a magnetic field from a recording medium. SOLUTION: The MTJ device is constituted of an antiferromagnetic layer 116, a fixed ferromagnetic layer 118 which is exchange-biased with the antiferromagnetic layer so that a magnetic moment cannot rotate even in the presence of an applied magnetic field 182, an insulating tunnel barrier layer 120 being in contact with the fixed ferromagnetic layer and a detection ferromagnetic layer 132 having the magnetic moment which is freely rotable in the presence of the applied magnetic field. Respective layers are rectangular shapes having parallel flank edges and the magnetic moment of the detection ferromagnetic layer 132 is bised in a longitudinal direction by a bias ferromagnetic layer 150 magnetostatically connected therewith in the absence of the applied magnetic field. An insulating layer 160 prevents shunt of a detection current and magnetostatically connects the bias ferromagnetic layer with the detection ferromagnetic layer without exerting adverse influence on the resistance of the MTJ MR head.

    CURRENT BIASED MAGNETORESISTIVE SPIN VALVE SENSOR

    公开(公告)号:MY110737A

    公开(公告)日:1999-02-27

    申请号:MYPI19932036

    申请日:1993-10-07

    Applicant: IBM

    Abstract: A MAGNETORESISTIVE READ SENSOR BASED ON THE SPIN VALVE EFFECT IN WHICH A COMPONENT OF THE READ ELEMENT RESISTANCE VARIES AS THE COSINE OF THE ANGLE BETWEEN THE MAGNETIZATION DIRECTIONS IN TWO ADJACENT MAGNETIC LAYERS IS DESCRIBED. THE SENSOR READ ELEMENT INCLUDES TWO ADJACENT FERROMAGNETIC LAYERS SEPARATED BY A NON-MAGNETIC METALLIC LAYER, THE MAGNETIC EASY AXIS OF EACH OF THE FERROMAGNETIC LAYERS BEING ALIGNED ALONG THE LONGITUDINAL AXIS OF THE FERROMAGNETIC LAYERS AND PERPENDICULAR TO THE TRACKWIDTH OF AN ADJACENT MAGNETIC STORAGE MEDIUM. THE SENSE CURRENT FLOWING IN THE SENSOR ELEMENT GENERATES A BIAS FIELD WHICH SETS THE DIRECTION OF MAGNETIZATION IN EACH FERROMAGNETIC LAYER AT AN EQUAL, BUT OPPOSITE, ANGLE WITH RESPECT TO THE MAGNETIC EASY AXIS THUS PROVIDING AN ANGULAR SEPARATION OF 2 IN THE ABSENCE OF AN APPLIED MAGNETIC SIGNAL.THE MAGNETIZATIONS OF BOTH FERROMAGNETIC LAYERS ARE RESPONSIVE TO AN APPLIED MAGNETIC FIELD TO CHANGE THEIR ANGULAR SEPARATION BY AN AMOUNT 2.(FIG 3)

    MAGNETIC TUNNEL JUNCTION MAGNETORESISTIVE READ HEAD WITH SENSING LAYER AS REAR FLUX GUIDE

    公开(公告)号:SG87011A1

    公开(公告)日:2002-03-19

    申请号:SG1998004218

    申请日:1998-10-16

    Applicant: IBM

    Abstract: A magnetic tunnel junction (MTJ) magnetoresistive read head (25) for a magnetic recording system has the MTJ sensing or free ferromagnetic layer (132) also functioning as a flux guide to direct magnetic flux from the magnetic recording medium (16) to the tunnel junction. The MTJ fixed ferromagnetic layer (118) and the MTJ tunnel barrier layer (120) have their front edges substantially coplanar with the sensing surface (200) of the head (25). Both the fixed and free ferromagnetic layers (118, 132) are in contact with opposite surfaces of the MTJ tunnel barrier layer (120) but the free ferromagnetic layer extends beyond the back edge (212, 208) of either the tunnel barrier layer or the fixed ferromagnetic layer, whichever back edge is closer to the sensing surface (200). This assures that the magnetic flux is non-zero in the tunnel junction region. The magnetization direction (119) of the fixed ferromagnetic layer (118) is fixed in a direction generally perpendicular to the sensing surface and thus to the magnetic recording medium (16), preferably by interfacial exchange coupling with an antiferromagnetic layer (116). The magnetization direction (133) of the free ferromagnetic layer (132) is aligned in a direction generally parallel to the surface of the medium (16) in the absence of an applied magnetic field and is free to rotate in the presence of applied magnetic fields from the medium. A layer of high coercivity hard magnetic material adjacent the sides of the free Ferromagnetic layer (132) longitudinally biases the magnetization of the free ferromagnetic layer in the preferred direction.

Patent Agency Ranking