公开(公告)号：JPH05241341A

公开(公告)日：1993-09-21

申请号：JP21583592

申请日：1992-08-13

Applicant: IBM

Inventor： JIEIMUZU ADAMU JIYUUBINSUKII ,  SUTEIIBUN MAIKURU KAATSU ,  KURISUTOFUAA FURANSHISU RAIANZ ,  UEIN MAATEIN MOROO

IPC: G03F7/004 ,  G03F7/037 ,  G03F7/039 ,  G03F7/09 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To ensure a short exposure time, high processing capacity and high metallic pattern resolving power at a reduced cost by using a radiation sensitive polymer contg. a specified additive as a resist compsn. CONSTITUTION: A resist compsn. contg. polydialkylglutarimide as a radiation sensitive polymer and 1,4,5,6,6,7-hexachloro-5-norbornane-2,3-dicarboxylic acid anhydride, 5-norbornane-2,3-dicarboxylic acid anhydride or succinic anhydride as an additive is used. Since the cyclic anhydride is contained, an undercut support 12B with a sharp gradient to a diazonaphthoquinone layer 14 on a silicon substrate 10 is easily formed. The time required to expose a resist can be reduced without deteriorating the contrast (resolving power) of the resist.