公开(公告)号：JPH05224411A

公开(公告)日：1993-09-03

申请号：JP26846992

申请日：1992-10-07

Applicant: IBM

Inventor： KURISUTOFUAA JIYON NOOZU ,  SUTEIIBU SEIICHI MIURA ,  MERUBIN UOREN MONTOGOMERII ,  UEIN MAATEIN MOROO ,  RANDORUFU JIYOZEFU SUMISU

IPC: G03F7/022 ,  H01L21/027

Abstract: PURPOSE: To obtain a high sensitivity, high contrast, excellent durability to the etching of an unexposed zone and vertical side wall shape, by containing a sensitizing agent of a mixed ester of bis and trisalkanes with a specific sulfonic acid. CONSTITUTION: This positive resist is constituted of a mixture of 100 pts.wt. phenol-aldehyde resin with 18-100 pts.wt. dissolution suppressing agent. The dissolution suppressing agent is the mixed ester introduced by esterifying a mixture naphthoquinone diazide 4- and 5-sulfonic acid with a polyphenol. The polyphenol is expressed by a formula, (ph(OH)x )y CR4-y . In the formula, ph expresses benzen ring, (x) expresses integers of 1-3, (y) expresses 2 or 3, R expresses hydrogen, fluorine or the like. The dissolution suppressing agnet has >=80% esterified hydroxyl group and contains 10-90mol% 4-sulfonate ester and 90-10mol% 5-sulfonate ester.

公开(公告)号：JPH03152544A

公开(公告)日：1991-06-28

申请号：JP25042290

申请日：1990-09-21

Applicant: IBM

Inventor： UIRIAMU ROSU BURANZUBOURUDO ,  FUIRITSUPU CHIU ,  UIRAADO AARU KONREE JIYUNIA ,  DEIRU MAREE KUROKATSUTO ,  MERUBIN UOREN MONGOMERII ,  UEIN MAATEIN MOROO

IPC: C08G8/00 ,  C08G8/10 ,  G03F7/039 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To enable dry development by using a phenol-aldehyde type condensation product and a photoactive compd. generating a strong acid which enables the reaction of hydroxy groups with an organometallic reagent when the compd. is exposed with deep UV. CONSTITUTION: A phenol-aldehyde type condensation product represented by formula I and a radiation-degradable acid generating material such as a metallic or nonmetallic onium salt, a tosylate or a non-metal sulfonic acid precursor as a radiation sensitive material are used. In the formula I, R is H, -CH3 or phenyl, R' is H, alkyl or aryl, R'' is H, halogen, nitro, alkoxy, alkyl, aryl or hydroxy and the basic arom. ring may be condensed with other cyclic structure so as to form a naphthol or anthracene unit. By such constitution, dry development is enabled.

公开(公告)号：JPH0680613A

公开(公告)日：1994-03-22

申请号：JP819693

申请日：1993-01-21

Applicant: IBM

Inventor： GUREGORII BUREITA ,  DANIERU JIYOZEFU DOOSON ,  MAAMUUDO MOSUTAFUA KOOJIYASUTE ,  RANII WAIIRIN KUUON ,  ERUUTSUDO HAABAATO MEISHII ,  DEIBITSUDO POORU MERITSUTO ,  UEIN MAATEIN MOROO ,  SUTANREE YUUJIIN PEROO ,  HAABANZU SHINGU SAKUDEBU ,  ROBAATO RABIN UTSUDO ,  HIROSHI ITOU

IPC: B01J31/02 ,  C07B61/00 ,  C07C68/06 ,  C07C69/96 ,  C08F8/00 ,  C08F12/24 ,  C08G8/28

公开(公告)号：JPH04328747A

公开(公告)日：1992-11-17

申请号：JP33464691

申请日：1991-12-18

Applicant: IBM

Inventor： KASURIIN MARII KOONETSUTO ,  JIYOOJI JIYOZEFU HEFUERON ,  MERUBIN UOREN MONTOGOMERII ,  UEIN MAATEIN MOROO

IPC: G03F7/004 ,  G03F7/022 ,  G03F7/16 ,  H01L21/027

Abstract: PURPOSE: To more uniformly coat the top of a substrate having a uniform of ununiform pattern by preparing a specified radiation sensitive compsn. and spin-coating the top of a semiconductive wafer with the compsn. CONSTITUTION: This radiation sensitive compsn. is composed of at least one of novolak resin and a polyvinylphenol copolymer, a radiation sensitive component selected from among diazoquinone, polyolefin sulfone and an acid generating agent and an ethyl-3-ethoxypropionate(EEP) solvent. The top of a substrate is spin-coated with the compsn. and the resultant film is dried until the solvent content of the film is reduced to

公开(公告)号：JPH0862835A

公开(公告)日：1996-03-08

申请号：JP19029695

申请日：1995-07-26

Applicant: IBM

Inventor： JIEEMUSU TOMASU FUAHEI ,  BURAIAN UEIN HAABUSUTO ,  REO ROORENSU RENEHAN ,  UEIN MAATEIN MOROO ,  GARII TOMASU SUPINITSURO ,  KEBUIN MAIKERU UERUSHIYU ,  ROBAATO RABUIN UTSUDO

IPC: G03F7/004 ,  C08G65/40 ,  C08G67/00 ,  C09D171/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a material suitable for an antireflection film, used in microlithography by far-UV light. SOLUTION: A copolymer of benzophenone and bisphenol A is known to have far-UV absorptivity. Then, the copolymer is useful particularly as the antireflection film in the field applying microlithography. The absorption at 248nm is intensified, when anthracene is introduced into the copolymer. The terminalstopping agent used for the copolymer is widely changeable according to the need of a user and is so selectable as to promote adhesiveness, stability and absorption of different wavelengths.

公开(公告)号：JPH0675378A

公开(公告)日：1994-03-18

申请号：JP15829693

申请日：1993-06-29

Applicant: IBM

Inventor： KURISUTOFUAA JIYON NOOSU ,  ERUUTSUDO HAABAATO MEISHII ,  UEIN MAATEIN MOROO

IPC: C08F8/32 ,  C09B69/10 ,  C09D5/00 ,  C09D133/02 ,  C09D133/26 ,  G02B1/11 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30 ,  G02B1/10

Abstract: PURPOSE: To obtain an improved material for reflection preventive coating by incorporating an imide reaction product of an amino aromatic chromophore with a polymer containing an anhydride group. CONSTITUTION: This reflection preventive layer forming composition is a coating film forming composition containing the imide reaction product or a N,N-2- substituted amide reaction product of at least one of the amino aromatic chromophore with the polymer containing the anhydride group. Concretely, a novel composition containing the reaction product of the polymer containing the anhydride group with an amine dye strongly absorbing ultraviolet rays in the range of 365nm to 436nm or 193nm to 300nm is provided. By the reaction, at least one of the amino aromatic chromophore is bonded with the polymer. And as the amino aromatic chromophore, any of an aromatic compound having a primary or secondary amino group and high in absorption factor is used and a preferable chromophore is one at least having the absorption factor of 10/μm.

公开(公告)号：JPH04217251A

公开(公告)日：1992-08-07

申请号：JP3137491

申请日：1991-02-01

Applicant: IBM

Inventor： UIRIAMU ROSU BURANZUBOURUDO ,  KURISUTOFUAA JIYON NOOZU ,  MERUBIN UOREN MONGOMERII ,  UEIN MAATEIN MOROO ,  KEBIN MAIKURU UERUSHIYU

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To obtain the acid-sensitized photoresist composition comprising an acid generation photoinitiator and a polymer binder and/or a polymerizable compound and an acid responsive group and being accelerated in photochemical reaction velocity. CONSTITUTION: This acid-initiation photoresist composition to be used comprises the acid generation photoinitiator and the polymer binder and/or a matrix, the acid responsive group capable of patternizing the composition by an acid initiation chemical reaction, and a sufficient amount of a hydroxyaromatic compound for accelerating a reaction velocity of the photoresist composition during irradiation for image formation, and the photoreaction velocity is remarkably enhanced by adding this hydroxyaromatic compound to the photoresist composition in a amount of 1-5weight%.

公开(公告)号：JPH03152543A

公开(公告)日：1991-06-28

申请号：JP25042190

申请日：1990-09-21

Applicant: IBM

Inventor： UIRAADO AARU KONREE JIYUNIA ,  JIEFURII DONARUDO JIEROOMU ,  UEIN MAATEIN MOROO ,  SUTANREE YUUJIIN PEROORUTO ,  GEERII TOMASU SUPINITSURO ,  ROBAATO RABIN UTSUDO

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PURPOSE: To ensure satisfactory contrast and sensitivity by using an arom. hydroxy substd. polymer, a radiation-degradable acid generating agent and a crosslinking agent having two epoxy groups per one molecule. CONSTITUTION: This photoresist contains polyhydroxystyrene, especially poly-p- hydroxystyrene or novolak such as m-cresol novolak or bisphenol A novolak as an arom. hydroxy substd. polymer, a metallic or nonmetallic onium salt or a nonmetallic precursor of sulfonic acid generating the strong acid when exposed with radiation as a radiation-degradable acid generating agent and an epoxide-contg. compd. having two epoxy groups and crosslinking the hydroxy substd. polymer in the presence of the acid generated under radiation. Satisfactory contrast is ensured without reducing sensitivity.

公开(公告)号：JPH05249680A

公开(公告)日：1993-09-28

申请号：JP20784692

申请日：1992-08-04

Applicant: IBM

Inventor： ROBAATO DEIBITSUDO AREN ,  UIRIAMU ROSU BURANZUBOURUDO ,  BAATON JIESHII KAAPENTAA ,  UIRIAMU DEIINAN HINZUBAAGU ,  JIYOZEFU RATOORE ,  MAIKURU JIYOOJI MAKUMASUTAA ,  MERUBIN UOREN MONTOGOMERII ,  UEIN MAATEIN MOROO ,  ROOGAN ROIDO SHINPUSON ,  ROBAATO JIEIMUZU TOUEIGU ,  GUREGORII MAIKURU UOORURAFU

IPC: G03F7/004 ,  C08F2/50 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To obtain a positive photoresist and to provide a photolithographic method using the photoresist. CONSTITUTION: This photoresist contains a polymer practically insoluble in water and base and unstable to light and a photo-acid generating agent capable of forming a strong acid. The photo-acid generating agent is sulfonate ester derived from N-hydroxyamide or N-hydroxyimide. This photoresist further contains a proper photosensitizer.

公开(公告)号：JPH05241341A

公开(公告)日：1993-09-21

申请号：JP21583592

申请日：1992-08-13

Applicant: IBM

Inventor： JIEIMUZU ADAMU JIYUUBINSUKII ,  SUTEIIBUN MAIKURU KAATSU ,  KURISUTOFUAA FURANSHISU RAIANZ ,  UEIN MAATEIN MOROO

IPC: G03F7/004 ,  G03F7/037 ,  G03F7/039 ,  G03F7/09 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To ensure a short exposure time, high processing capacity and high metallic pattern resolving power at a reduced cost by using a radiation sensitive polymer contg. a specified additive as a resist compsn. CONSTITUTION: A resist compsn. contg. polydialkylglutarimide as a radiation sensitive polymer and 1,4,5,6,6,7-hexachloro-5-norbornane-2,3-dicarboxylic acid anhydride, 5-norbornane-2,3-dicarboxylic acid anhydride or succinic anhydride as an additive is used. Since the cyclic anhydride is contained, an undercut support 12B with a sharp gradient to a diazonaphthoquinone layer 14 on a silicon substrate 10 is easily formed. The time required to expose a resist can be reduced without deteriorating the contrast (resolving power) of the resist.