Abstract:
A system and method for a processor with memory with combined line and word access are presented. A system performs narrow read/write memory accesses and wide read/write memory accesses to the same memory bank using multiplexers and latches to direct data. The system processes 16 byte load/sore requests using a narrow read/write memory access and also processes 128 byte DMA and instruction fetch requests using a wide read/write memory access. During DMA requests, the system writes/reads sixteen DMA operations to memory on one instruction cycle. By doing this, the memory is available to process load/store or instruction fetch requests during fifteen other instruction cycles.
Abstract:
Methods and apparatus provide for enabling a digital circuit by biasing at least one switch transistor ON such that a voltage potential of a virtual ground node is substantially- equal to a voltage potential of a ground node for a power supply to the digital circuit, wherein the digital circuit is implemented using a plurality of transistors in a silicon-on- insulator (SOI) arrangement and at least some of the transistors are referenced to the virtual ground node; and disabling the digital circuit by biasing a gate terminal of the switch transistor below the voltage potential of the ground node .
Abstract:
A system for a processor with memory with combined line and word access is presented. A system performs narrow read/write memory accesses and wide read/write memory accesses to the same memory bank using multiplexers and latches to direct data. The system processes 16 byte load/sore requests using a narrow read/write memory access and also processes 128 byte DMA and instruction fetch requests using a wide read/write memory access. During DMA requests, the system writes/reads sixteen DMA operations to memory on one instruction cycle. By doing this, the memory is available to process load/store or instruction fetch requests during fifteen other instruction cycles.
Abstract:
A system for a processor with memory with combined line and word access is presented. A system performs narrow read/write memory accesses and wide read/write memory accesses to the same memory bank using multiplexers and latches to direct data. The system processes 16 byte load/sore requests using a narrow read/write memory access and also processes 128 byte DMA and instruction fetch requests using a wide read/write memory access. During DMA requests, the system writes/reads sixteen DMA operations to memory on one instruction cycle. By doing this, the memory is available to process load/store or instruction fetch requests during fifteen other instruction cycles.
Abstract:
PROBLEM TO BE SOLVED: To provide system and method for making logic circuits operated. SOLUTION: The systems for making logic circuits operated include a first logic circuit 610 and a multiplexer 602. The multiplexer 602 is configured to receive a selected signal Sel_b. The selected signal Sel_b controls the multiplexer 620 so as to select one of multiplexer input signals to be provided as the output signal of the multiplexer. When the selected signal Sel_b controls the multiplexer 602 to selected one output signal of the logic circuit, the first logic circuit 610 operates in a first mode. When the selected signal Sel_b controls the multiplexer 620 so as to non-selectively control the output signal of the logic circuit, the first logic circuit 610 operates in a second mode. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To decrease malfunction resulting from difference of threshold voltage of transistors of a sense amplifier. SOLUTION: The SOI sense amplifier 300 includes; a pair of input bit lines 311 and 312; a pair of output data lines 321 and 322; a pair of bit line transistors 361 and 362; a pair of data line pulldown transistors 341 and 342; and a pair of precharge circuits (333 and 334). While each of the precharge circuits is combined with a corresponding side of intermediate nodes 331 and 332, the corresponding side of the intermediate nodes 331 and 332 is constituted to precharge the prescribed voltage in the status that the sense amplifier 100 is not enabled. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To increase current capacity which can flow a data line pulldown transistor of a sense amplifier. SOLUTION: The sense amplifier 400 includes; a pair of input bit lines 411 and 412; a pair of output data lines 421 and 422; a pair of bit line transistors 461 and 462; and a pair of data line pulldown transistors 441 and 442. Each of the data line pulldown transistors 441 and 442 is constituted so that a body is connected to the other side of an intermediate nodes 431 and 432. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To lower the susceptibility of a sense amplifier to fluctuation of threshold voltage of a data line pulldown transistor. SOLUTION: The sense amplifier 600 includes; a pair of input bit lines 611 and 612; a pair of output data lines 621 and 622; a pair of bit line transistors 661 and 662; a pair of data line pulldown transistors 641 and 642; and a pair of first precharge circuits (635 and 636). While each of the first precharge circuits is combined with a corresponding side of intermediate nodes 631 and 632, the corresponding side of the intermediate nodes 631 and 632 is constituted to precharge the voltage on another side of the bit line 611 and 612. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a pulse generating circuit capable of generating an output pulse signal having a large pulse width. SOLUTION: The pulse generating circuit includes a first logic means 42, a second logic means 44, a first delay means 72, and a second delay means 92. The first logic means 42 receives an input clock signal. The first delay means 72 delays the input clock signal just for a first delay time. The second logic means 44 receives a signal outputted from the first logic means 42. The second delay means 92 delays the signal outputted from the first logic means 42 just for a second delay time. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To disclose a method to implement an address mapping for a memory in a computer system. SOLUTION: The memory is composed of several memory banks and each memory bank identifies itself with each bank number. A block address component of a physical address is converted into a corresponding bank number and a related internal bank address. The bank number is constituted by connecting a fist lookup table output with a second lookup table output. The output of the first table is obtained by a first segment X1 and a second segment Y1 of the block address component and the output of the second table is obtained by a third segment X2 and a fourth segment Y2 of the block address component. Data saved at a specified location can be accessed by means of the bank number and the related internal bank address.