公开(公告)号：JPH0851208A

公开(公告)日：1996-02-20

申请号：JP16265395

申请日：1995-06-28

Applicant: IBM

Inventor： KURAUSU DEIITORIHI BAIYAA ,  TAKI NASERU BUUTEI ,  CHIYAN MIN SHIE ,  RUI RU CHIEN SHIYUU

IPC: H01L21/336 ,  H01L29/786

Abstract: PURPOSE: To form a body contact without requiring penetration through a source, as required by conventional technology, while minimizing increase of the area by fabricating an SOI transistor having a self-aligned body contact passing through the extension to a gate. CONSTITUTION: An initial opening is defined by protruding a source 116 and a drain 114 and a conformal layer 120 is formed thereon. It is then etched to form side walls defining an aperture and a contact aperture is etched using these side walls to define a side wall supporting member for supporting an insulation side wall thus isolating a collector electrode from the gate, source and drain.