公开(公告)号：JP2001320058A

公开(公告)日：2001-11-16

申请号：JP2000139494

申请日：2000-05-12

Applicant: IBM

Inventor： THOMAS DODERER ,  HWANG WEI ,  CHAN C TSUEI

IPC: H01L21/764 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method as well as a structure for a single device to perform both n-type conduction and p-type conduction. SOLUTION: An ultra-small electronic device includes a gate layer adapted to receive an input voltage. An insulating layer is formed on a gate layer while a conductive channel layer is formed on the insulating layer, and a current is carried between a source and a drain. The conductive channel layer is adapted to provide a dual channel. The dual channel comprises both a p-channel and an n-channel. One of the p-channel and the n-channel is selectively usable in response to the polarity of the input voltage. A method for forming the device and application example of the device is also disclosed and claimed.

公开(公告)号：SG95620A1

公开(公告)日：2003-04-23

申请号：SG200001956

申请日：2000-04-06

Applicant: IBM

Inventor： THOMAS DODERER ,  WEI HWANG

IPC: H01L29/786 ,  H01L21/28 ,  H01L21/336 ,  H01L27/00