公开(公告)号：MY125167A

公开(公告)日：2006-07-31

申请号：MYPI19994111

申请日：1999-09-22

Applicant: IBM

Inventor： GREGORY COSTRINI ,  RONALD DEAN GOLDBLATT ,  JOHN EDWARD HEIDENREICH III ,  THOMAS LEDDY MCDEVITT

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/50 ,  H01L21/60 ,  H01L23/485

Abstract: THE PRESENT INVENTION PROVIDES A METHOD FOR FABRICATING AN INTEGRATED CIRCUIT (IC) STRUCTURE HAVING AN A1 CONTACT (40) IN ELECTRICAL COMMUNICATION WITH CU WIRING (22) EMBEDDED IN THE INITIAL SEMICONDUCTOR WAFER (20). IN ACCORDANCE WITH THE METHOD OF THE PRESENT INVENTION, THE A1 CONTACT IS FORMED IN AREAS OF THE IC STRUCTURE WHICH CONTAIN OR DO NOT CONTAIN AN UNDERLYING REGION OF CU WIRING. THE PRESENT INVENTION ALSO PROVIDES A METHOD OF INTERCONNECTING THE FABRICATED STRUCTURE TO A SEMICONDUCTING PACKAGING MATERIAL THROUGH THE USE OF WIREBOND (36) OR CONTROLLED COLLAPSE CHIP CONNECTION (C4) SOLDER (38).(FIG.2D)

公开(公告)号：MY108408A

公开(公告)日：1996-09-30

申请号：MYPI19920456

申请日：1992-03-19

Applicant: IBM

Inventor： THOMAS LEDDY MCDEVITT ,  PEI-ING PAUL LEE ,  THOMAS JOHN LICATA ,  PAUL CHRISTIAN PARRIES ,  SCOTT LEWIS PENNINGTON ,  JAMES GARDNER RYAN ,  DAVID CRAIG STRIPPE

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/441 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40

Abstract: A SPUTTERING DEPOSITION WHEREIN HIGH ASPECT RATIO APERTURES ARE COATED WITH CONDUCTIVE FILMS EXHIBITING LOW BULK RESISTIVITY, LOW IMPURITY CONCENTRATIONS, AND REGULAR MORPHOLOGIES. A COLLIMATOR IS USED HAVING AN ASPECT RATIO THAT APPROXIMATES THE ASPECT RATIO OF THE APERTURES. THE RESULTING FILM THICKNESS AT THE BOTTOM OF THE APERTURE IS AT LEAST 2X WHAT CAN BE ACHIEVED USING CONVENTIONAL SPUTTERING METHODS. (FIG. 1)